Room-temperature laser operation of AlGaAs/GaAs double heterostructures fabricated on Si substrates by metalorganic chemical vapor deposition
- Author
- SAKAI, S1 ; SOGA, T; TAKEYASU, M; UMENO, M
[1] Nagoya inst. technology, Showa-ku Nagoya 466, Japan - Source
Applied physics letters. 1986, Vol 48, Num 6, pp 413-414 ; ref : 6 ref
- CODEN
- APPLAB
- ISSN
- 0003-6951
- Scientific domain
- Crystallography; Electronics; Optics; Condensed state physics
- Publisher
- American Institute of Physics, Melville, NY
- Publication country
- United States
- Document type
- Article
- Language
- English
- Keyword (fr)
- Aluminium Gallium Arséniure Mixte Dépôt chimique phase vapeur Fabrication Hétérojonction double Laser semiconducteur Silicium Substrat Température ambiante
- Keyword (en)
- Aluminium Gallium Arsenides Mixed Chemical vapor deposition Manufacturing Double heterojunction Semiconductor laser Silicon Substrate Room temperature
- Keyword (es)
- Aluminio Depósito químico fase vapor Fabricacion Heterounión doble Láser semiconductor Silicio Substrato Temperatura ambiente
- Classification
- Pascal
- 001 Exact sciences and technology / 001B Physics / 001B40 Fundamental areas of phenomenology (including applications) / 001B40B Optics / 001B40B55 Lasers / 001B40B55P Semiconductor lasers; laser diodes
- Discipline
- Physics : optics
- Origin
- Inist-CNRS
- Database
- PASCAL
- INIST identifier
- 7856893
Sauf mention contraire ci-dessus, le contenu de cette notice bibliographique peut être utilisé dans le cadre d’une licence CC BY 4.0 Inist-CNRS / Unless otherwise stated above, the content of this bibliographic record may be used under a CC BY 4.0 licence by Inist-CNRS / A menos que se haya señalado antes, el contenido de este registro bibliográfico puede ser utilizado al amparo de una licencia CC BY 4.0 Inist-CNRS
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DOI
10.1063/1.96515 
https://dx.doi.org/10.1063/1.96515
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