Novel electronic properties of a potassium overlayer on Si(001)-(2×1)
- Other title
- Nouvelles propriétés électroniques d'un revêtement de potassium sur Si(001)-(2×1) (fr)
- Author
- CIRACI, S1 ; BATRA, I. P
[1] IBM, res. lab., San Jose CA 95193, United States - Source
Physical review letters. 1986, Vol 56, Num 8, pp 877-880 ; ref : 13 ref
- CODEN
- PRLTAO
- ISSN
- 0031-9007
- Scientific domain
- Optics; Atomic molecular physics; Condensed state physics; Physics; Plasma physics
- Publisher
- American Physical Society, Ridge, NY
- Publication country
- United States
- Document type
- Article
- Language
- English
- Keyword (fr)
- Adsorption Calcul Densité charge Energie Silicium Structure bande Transition métal isolant Métal pur K
- Keyword (en)
- Adsorption Calculation Charge density Energy Silicon Band structure Metal insulator transition
- Keyword (es)
- Adsorcion Calculo Densidad carga Energia Silicio Estructura banda Transición metal aislante
- Keyword (de)
- Adsorption Berechnung Ladungsdichte Energie Silicium Bandstruktur
- Classification
- Pascal
- 001 Exact sciences and technology / 001B Physics / 001B70 Condensed matter: electronic structure, electrical, magnetic, and optical properties / 001B70A Electron states / 001B70A15 Methods of electronic structure calculations
- Pascal
- 001 Exact sciences and technology / 001B Physics / 001B80 Cross-disciplinary physics: materials science; rheology / 001B80A Materials science / 001B80A05 Specific materials / 001B80A05B Metals, semimetals and alloys
- Discipline
- Physics and materials science Physics of condensed state : electronic structure, electrical, magnetic and optical properties
- Origin
- Inist-CNRS
- Database
- PASCAL
- INIST identifier
- 7863227
Sauf mention contraire ci-dessus, le contenu de cette notice bibliographique peut être utilisé dans le cadre d’une licence CC BY 4.0 Inist-CNRS / Unless otherwise stated above, the content of this bibliographic record may be used under a CC BY 4.0 licence by Inist-CNRS / A menos que se haya señalado antes, el contenido de este registro bibliográfico puede ser utilizado al amparo de una licencia CC BY 4.0 Inist-CNRS
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DOI
10.1103/PhysRevLett.56.877 
https://dx.doi.org/10.1103/PhysRevLett.56.877
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