Etude de la concentration superficielle de GaInAs, GaAlAs et GaPAs par rendement de photoémission X
- Otro titulo
- Study of the surface concentration of GaInAs, GaAlAs and GaPAs by X-ray photoemission yield (en)
- Autor
- BOUABELLOU, A1 ; SCHMELEV, V. N
[1] Univ. Constantine, lab. physique solide, Algeria - Fuente
Journal de microscopie et de spectroscopie électroniques. 1985, Vol 10, Num 6, pp 551-562 ; ref : 8 ref
- CODEN
- JMSEDI
- ISSN
- 0395-9279
- Campo Científico
- Crystallography; Metallurgy, welding; Condensed state physics
- Editor
- Société française de microscopie électronique, Ivry-sur-Seine
- País de la publicación
- France
- Tipo de documento
- Article
- Idioma
- French
- Palabra clave (fr)
- Aluminium Gallium Arséniure Mixte Composition chimique Composé III-V Composé minéral Couche mince Emission photoélectronique Epitaxie Etude expérimentale Gallium Indium Arséniure Mixte Gallium Phosphoarséniure Rayon X Rendement Surface
- Palabra clave (in)
- Aluminium Gallium Arsenides Mixed Chemical composition III-V compound Inorganic compound Thin film Photoelectron emission Epitaxy Experimental study Gallium Indium Arsenides Mixed Gallium Arsenides phosphides X ray Yield Surface
- Palabra clave (es)
- Aluminio Composicion quimica Compuesto III-V Compuesto mineral Capa delgada Emisión fotoelectrónica Epitaxia Estudio experimental Galio Galio Rayos X Rendimiento Superficie
- Clasificación
- Pascal
- 001 Exact sciences and technology / 001B Physics / 001B60 Condensed matter: structure, mechanical and thermal properties / 001B60H Surfaces and interfaces; thin films and whiskers (structure and nonelectronic properties) / 001B60H60 Physical properties of thin films, nonelectronic
- Disciplina
- Physics of condensed state : structure, mechanical and thermal properties
- Procedencia
- Inist-CNRS
- Base de datos
- PASCAL
- Identificador INIST
- 7866374
Sauf mention contraire ci-dessus, le contenu de cette notice bibliographique peut être utilisé dans le cadre d’une licence CC BY 4.0 Inist-CNRS / Unless otherwise stated above, the content of this bibliographic record may be used under a CC BY 4.0 licence by Inist-CNRS / A menos que se haya señalado antes, el contenido de este registro bibliográfico puede ser utilizado al amparo de una licencia CC BY 4.0 Inist-CNRS
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