Effect of applied electric field on the buildup and decay of photorefractive gratings
- Author
- JONATHAN, J.-M. C1 ; HELLWARTH, R. W; ROOSEN, G
[1] Cent. univ. Orsay, Orsay 91406, France - Source
IEEE journal of quantum electronics. 1986, Vol 22, Num 10, pp 1936-1941 ; ref : 16 ref
- CODEN
- IEJQA7
- ISSN
- 0018-9197
- Scientific domain
- Electronics; Optics; Telecommunications
- Publisher
- Institute of Electrical and Electronics Engineers, New York, NY
- Publication country
- United States
- Document type
- Article
- Language
- English
- Keyword (fr)
- Bismuth Silicium Oxyde Mixte Champ électrique Matériau enregistrement Réseau diffraction Effet photoréfractif
- Keyword (en)
- Bismuth Silicon Oxides Mixed Electric field Recording material Photorefractive effect Diffraction grating
- Keyword (es)
- Bismuto Campo electrico Material grabación Rejilla difracción
- Classification
- Pascal
- 001 Exact sciences and technology / 001B Physics / 001B40 Fundamental areas of phenomenology (including applications) / 001B40B Optics / 001B40B79 Optical elements, devices, and systems / 001B40B79D Gratings
- Discipline
- Physics : optics
- Origin
- Inist-CNRS
- Database
- PASCAL
- INIST identifier
- 7891994
Sauf mention contraire ci-dessus, le contenu de cette notice bibliographique peut être utilisé dans le cadre d’une licence CC BY 4.0 Inist-CNRS / Unless otherwise stated above, the content of this bibliographic record may be used under a CC BY 4.0 licence by Inist-CNRS / A menos que se haya señalado antes, el contenido de este registro bibliográfico puede ser utilizado al amparo de una licencia CC BY 4.0 Inist-CNRS
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DOI
10.1109/JQE.1986.1072900 
https://dx.doi.org/10.1109/JQE.1986.1072900
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