Stabilization of InP substrate under annealing in the presence of GaAs
- Autor
- SACILOTTI, M1 ; MASUT, R. A; ROTH, A. P
[1] National res. council Canada, div. chemistry, Ottawa ON K1A 0R6, Canada - Fuente
Applied physics letters. 1986, Vol 48, Num 7, pp 481-483 ; ref : 18 ref
- CODEN
- APPLAB
- ISSN
- 0003-6951
- Campo Científico
- Crystallography; Electronics; Optics; Condensed state physics
- Editor
- American Institute of Physics, Melville, NY
- País de la publicación
- United States
- Tipo de documento
- Article
- Idioma
- English
- Palabra clave (fr)
- Composé minéral Diffraction RX Dispersion énergie Etude expérimentale Indium Phosphure Recuit Stabilisation Support Traitement surface
- Palabra clave (in)
- Inorganic compound X ray diffraction Energy dispersion Experimental study Indium Phosphides Annealing Stabilization Support Surface treatment
- Palabra clave (es)
- Compuesto mineral Difraccion RX Dispersión energía Estudio experimental Indio Recocido Estabilizacion Sustrato Tratamiento superficie
- Clasificación
- Pascal
- 001 Exact sciences and technology / 001B Physics / 001B60 Condensed matter: structure, mechanical and thermal properties / 001B60H Surfaces and interfaces; thin films and whiskers (structure and nonelectronic properties) / 001B60H90 Other topics in structure, and nonelectronic properties of surfaces and interfaces; thin films and whiskers
- Disciplina
- Physics of condensed state : structure, mechanical and thermal properties
- Procedencia
- Inist-CNRS
- Base de datos
- PASCAL
- Identificador INIST
- 7892097
Sauf mention contraire ci-dessus, le contenu de cette notice bibliographique peut être utilisé dans le cadre d’une licence CC BY 4.0 Inist-CNRS / Unless otherwise stated above, the content of this bibliographic record may be used under a CC BY 4.0 licence by Inist-CNRS / A menos que se haya señalado antes, el contenido de este registro bibliográfico puede ser utilizado al amparo de una licencia CC BY 4.0 Inist-CNRS
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DOI
10.1063/1.96536 
https://dx.doi.org/10.1063/1.96536
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