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Diffusion of ion-implanted phosphorus within thermally grown SiO2 in O2 ambient

Author
YAMAJI, T1 ; ICHIKAWA, F
[1] OKI Electric Industry co. ltd., Tokyo 193, Japan
Source

Journal of applied physics. 1986, Vol 59, Num 6, pp 1981-1985 ; ref : 14 ref

CODEN
JAPIAU
ISSN
0021-8979
Scientific domain
Crystallography; Electronics; Optics; Condensed state physics; Physics
Publisher
American Institute of Physics, Woodbury, NY
Publication country
United States
Document type
Article
Language
English
Keyword (fr)
Atmosphère oxydante Coefficient diffusion Composé minéral Concentration impureté Etude expérimentale Hétérodiffusion Implantation ion Phosphore Profil diffusion Recuit Silicium Oxyde Spectrométrie SIMS
Keyword (en)
Oxidizing atmosphere Diffusion coefficient Inorganic compound Impurity density Experimental study Impurity diffusion Ion implantation Phosphorus Diffusion profile Annealing Silicon Oxides Secondary ion mass spectrometry
Keyword (es)
Atmósfera oxidante Coeficiente difusion Compuesto mineral Concentración impureza Estudio experimental Heterodifusión Implantación ión Fósforo Perfil difusión Recocido Silicio Espectrometría SIMS
Classification
Pascal
001 Exact sciences and technology / 001B Physics / 001B60 Condensed matter: structure, mechanical and thermal properties / 001B60F Transport properties of condensed matter (nonelectronic) / 001B60F30 Diffusion in solids / 001B60F30J Diffusion of impurities

Discipline
Physics of condensed state : structure, mechanical and thermal properties
Origin
Inist-CNRS
Database
PASCAL
INIST identifier
7912131

Sauf mention contraire ci-dessus, le contenu de cette notice bibliographique peut être utilisé dans le cadre d’une licence CC BY 4.0 Inist-CNRS / Unless otherwise stated above, the content of this bibliographic record may be used under a CC BY 4.0 licence by Inist-CNRS / A menos que se haya señalado antes, el contenido de este registro bibliográfico puede ser utilizado al amparo de una licencia CC BY 4.0 Inist-CNRS

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