Band structure of semiconductor superlattices with ultrathin layers (GaAs)n/(AlAs)n with n=1,2,3,4
- Author
- NAKAYAMA, T1 ; KAMIMURA, H
[1] Univ. Tokyo, fac. sci., dep. physics, Tokyo 113, Japan - Source
Journal of the Physical Society of Japan. = Nihon Butsuri Gakkai ōji hōkoku. 1985, Vol 54, Num 12, pp 4726-4734 ; ref : 10 ref
- CODEN
- JUPSAU
- ISSN
- 0031-9015
- Scientific domain
- Crystallography; Mechanics acoustics; Condensed state physics; Theoretical physics
- Publisher
- Institute of Pure and Applied Physics, Tokyo
/
Physical Society of Japan, Tokyo
- Publication country
- Japan
- Document type
- Article
- Language
- English
- Keyword (fr)
- Aluminium Arséniure Gallium Arséniure Hétérojonction Structure bande Superréseau
- Keyword (en)
- Aluminium Arsenides Gallium Arsenides Heterojunction Band structure Superlattice
- Keyword (es)
- Aluminio Galio Heterounión Estructura banda Superred
- Classification
- Pascal
- 001 Exact sciences and technology / 001D Applied sciences / 001D03 Electronics / 001D03F Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices / 001D03F01 Interfaces
- Discipline
- Electronics
- Origin
- Inist-CNRS
- Database
- PASCAL
- INIST identifier
- 7916180
Sauf mention contraire ci-dessus, le contenu de cette notice bibliographique peut être utilisé dans le cadre d’une licence CC BY 4.0 Inist-CNRS / Unless otherwise stated above, the content of this bibliographic record may be used under a CC BY 4.0 licence by Inist-CNRS / A menos que se haya señalado antes, el contenido de este registro bibliográfico puede ser utilizado al amparo de una licencia CC BY 4.0 Inist-CNRS
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DOI
10.1143/JPSJ.54.4726 
https://dx.doi.org/10.1143/JPSJ.54.4726
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