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Diffusion of chromium in gallium arsenide

Author
DEAL, M. D1 ; STEVENSON, D. A
[1] Stanford univ., dep. materials sci. eng., Stanford CA 94305, United States
Source

Journal of applied physics. 1986, Vol 59, Num 7, pp 2398-2407 ; ref : 46 ref

CODEN
JAPIAU
ISSN
0021-8979
Scientific domain
Crystallography; Electronics; Optics; Condensed state physics; Physics
Publisher
American Institute of Physics, Woodbury, NY
Publication country
United States
Document type
Article
Language
English
Keyword (fr)
Atmosphère contrôlée Chrome Coefficient diffusion Composé minéral Etude expérimentale Gallium Arséniure Hétérodiffusion Impureté Interstitiel Profil diffusion Semiconducteur
Keyword (en)
Controlled atmosphere Chromium Diffusion coefficient Inorganic compound Experimental study Gallium Arsenides Impurity diffusion Impurity Interstitial Diffusion profile Semiconductor materials
Keyword (es)
Atmosfera controlada Cromo Coeficiente difusion Compuesto mineral Estudio experimental Galio Heterodifusión Impureza Intersticial Perfil difusión Semiconductor(material)
Classification
Pascal
001 Exact sciences and technology / 001B Physics / 001B60 Condensed matter: structure, mechanical and thermal properties / 001B60F Transport properties of condensed matter (nonelectronic) / 001B60F30 Diffusion in solids / 001B60F30J Diffusion of impurities

Discipline
Physics of condensed state : structure, mechanical and thermal properties
Origin
Inist-CNRS
Database
PASCAL
INIST identifier
7942232

Sauf mention contraire ci-dessus, le contenu de cette notice bibliographique peut être utilisé dans le cadre d’une licence CC BY 4.0 Inist-CNRS / Unless otherwise stated above, the content of this bibliographic record may be used under a CC BY 4.0 licence by Inist-CNRS / A menos que se haya señalado antes, el contenido de este registro bibliográfico puede ser utilizado al amparo de una licencia CC BY 4.0 Inist-CNRS

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