Theory of photoluminescence in quantum wells in the presence of transverse electric field: Monte Carlo approach
- Author
- JASPRIT SINGH1
[1] Univ. Michigan, dep. electrical computer eng., Ann Arbor MI 48109, United States - Source
Journal of applied physics. 1986, Vol 59, Num 8, pp 2953-2957 ; ref : 16 ref
- CODEN
- JAPIAU
- ISSN
- 0021-8979
- Scientific domain
- Crystallography; Electronics; Optics; Condensed state physics; Physics
- Publisher
- American Institute of Physics, Woodbury, NY
- Publication country
- United States
- Document type
- Article
- Language
- English
- Keyword (fr)
- Aluminium Gallium Arséniure Mixte Champ transversal Champ électrique Etat fondamental Gallium Arséniure Hétérojonction Méthode Monte Carlo Photoluminescence Puits quantique
- Keyword (en)
- Aluminium Gallium Arsenides Mixed Transverse field Electric field Ground state Gallium Arsenides Heterojunction Monte Carlo method Photoluminescence Quantum well
- Keyword (es)
- Aluminio Campo transversal Campo electrico Estado fundamental Galio Heterounión Metodo Monte Carlo Fotoluminiscencia Pozo cuántico
- Classification
- Pascal
- 001 Exact sciences and technology / 001D Applied sciences / 001D03 Electronics / 001D03F Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices / 001D03F01 Interfaces
- Discipline
- Electronics
- Origin
- Inist-CNRS
- Database
- PASCAL
- INIST identifier
- 7942500
Sauf mention contraire ci-dessus, le contenu de cette notice bibliographique peut être utilisé dans le cadre d’une licence CC BY 4.0 Inist-CNRS / Unless otherwise stated above, the content of this bibliographic record may be used under a CC BY 4.0 licence by Inist-CNRS / A menos que se haya señalado antes, el contenido de este registro bibliográfico puede ser utilizado al amparo de una licencia CC BY 4.0 Inist-CNRS
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DOI
10.1063/1.336933 
https://dx.doi.org/10.1063/1.336933
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