Topographical limitations to the metallization of very large scale integrated structures by bias sputtering: experiments and computer simulations
- Author
- BADER, H. P1 ; LARDON, M. A
[1] Balzers A.G., Balzers 9496, Liechtenstein - Source
Journal of vacuum science and technology. B. Microelectronics processing and phenomena. 1986, Vol 4, Num 5, pp 1192-1194 ; ref : 8 ref
- CODEN
- JVTBD9
- ISSN
- 0734-211X
- Scientific domain
- Electronics; Computer science
- Publisher
- American Institute of Physics, New York, NY
- Publication country
- United States
- Document type
- Article
- Language
- English
- Keyword (fr)
- Appareillage Cavité Dépôt Fabrication microélectronique Forme circulaire Microscopie électronique balayage Modèle Métallisation Phénomène critique Polarisation électrique Pulvérisation Rainure Simulation Technologie planaire Tension polarisation Topographie
- Keyword (en)
- Instrumentation Cavity Deposition Microelectronic fabrication Circular shape Scanning electron microscopy Models Metallizing Critical phenomenon Electrical polarization Spraying Groove Simulation Planar technology Bias voltage Topography
- Keyword (es)
- Aparatos Cavidad Depósito Fabricación microeléctrica Forma circular Microscopia electronica barrido Modelo Metalización Fenómeno crítico Polarización eléctrica Pulverizacion Ranura Simulacion Tecnología planar Voltage polarización Topografia
- Classification
- Pascal
- 001 Exact sciences and technology / 001D Applied sciences / 001D03 Electronics / 001D03F Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices / 001D03F17 Microelectronic fabrication (materials and surfaces technology)
- Discipline
- Electronics
- Origin
- Inist-CNRS
- Database
- PASCAL
- INIST identifier
- 7949826
Sauf mention contraire ci-dessus, le contenu de cette notice bibliographique peut être utilisé dans le cadre d’une licence CC BY 4.0 Inist-CNRS / Unless otherwise stated above, the content of this bibliographic record may be used under a CC BY 4.0 licence by Inist-CNRS / A menos que se haya señalado antes, el contenido de este registro bibliográfico puede ser utilizado al amparo de una licencia CC BY 4.0 Inist-CNRS
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DOI
10.1116/1.583482 
https://dx.doi.org/10.1116/1.583482
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