Diffusion of native defects in (Pb1-xSnx)1-yTey during liquid phase epitaxy
- Autor
- ALEKSANDROVA, O. A1 ; KAMCHATKA, M. I; MIROPOLSKII, M. S; PASSYNKOV, V. V
[1] V. I. Ulyanov electrical eng. inst., Leningrad 197022, Ussr - Nombre de la conferencia
- Ion implantation in semiconductors and other materials and ion beam devices. Working meeting (1985)
- Fuente
Physica status solidi. A. Applied research. 1986, Vol 94, Num 1, pp 139-145 ; ref : 13 ref
- CODEN
- PSSABA
- ISSN
- 0031-8965
- Campo Científico
- Crystallography; Electronics; Metallurgy, welding; Condensed state physics
- Editor
- Wiley-VCH, Berlin
- País de la publicación
- Germany
- Tipo de documento
- Conference Paper
- Idioma
- English
- Palabra clave (fr)
- Composé minéral Couche mince Croissance cristalline Diffusion chimique Défaut ponctuel Epitaxie Etain II Plomb «II» Tellurure Mixte Etude théorique Solution solide
- Palabra clave (in)
- Inorganic compound Thin film Crystal growth Chemical diffusion Point defect Epitaxy Tin II Lead «II» Tellurides Mixed Theoretical study Solid solution
- Palabra clave (es)
- Compuesto mineral Capa delgada Crecimiento cristalino Difusión química Defecto puntual Epitaxia Estaño II Estudio teórico Solución sólida
- Clasificación
- Pascal
- 001 Exact sciences and technology / 001B Physics / 001B60 Condensed matter: structure, mechanical and thermal properties / 001B60H Surfaces and interfaces; thin films and whiskers (structure and nonelectronic properties) / 001B60H60 Physical properties of thin films, nonelectronic
- Disciplina
- Physics of condensed state : structure, mechanical and thermal properties
- Procedencia
- Inist-CNRS
- Base de datos
- PASCAL
- Identificador INIST
- 7961855
Sauf mention contraire ci-dessus, le contenu de cette notice bibliographique peut être utilisé dans le cadre d’une licence CC BY 4.0 Inist-CNRS / Unless otherwise stated above, the content of this bibliographic record may be used under a CC BY 4.0 licence by Inist-CNRS / A menos que se haya señalado antes, el contenido de este registro bibliográfico puede ser utilizado al amparo de una licencia CC BY 4.0 Inist-CNRS
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DOI
10.1002/pssa.2210940115 
https://dx.doi.org/10.1002/pssa.2210940115
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