Thermal stability of epitaxial Al/GaAs Schottky barriers prepared by molecular-beam epitaxy
- Author
- MISSOUS, M1 ; RHODERICK, E. H; SINGER, K. E
[1] Univ. Manchester, inst. sci. technology, Manchester M60 1QD, United Kingdom - Source
Journal of applied physics. 1986, Vol 59, Num 9, pp 3189-3195 ; ref : 13 ref
- CODEN
- JAPIAU
- ISSN
- 0021-8979
- Scientific domain
- Crystallography; Electronics; Optics; Condensed state physics; Physics
- Publisher
- American Institute of Physics, Woodbury, NY
- Publication country
- United States
- Document type
- Article
- Language
- English
- Keyword (fr)
- Aluminium Barrière Schottky Caractéristique capacité tension Caractéristique courant tension Condensation faisceau moléculaire Contact métal semiconducteur Contact électrique Epitaxie Gallium Arséniure Recuit Stabilité thermique
- Keyword (en)
- Aluminium Schottky barrier Voltage capacity curve Voltage current curve Molecular beam condensation Semiconductor metal contact Electric contact Epitaxy Gallium Arsenides Annealing Thermal stability
- Keyword (es)
- Aluminio Barrera Schottky Característica capacidad tensión Característica corriente tensión Condensación haz molecular Contacto metal semiconductor Contacto eléctrico Epitaxia Galio Recocido Estabilidad termica
- Classification
- Pascal
- 001 Exact sciences and technology / 001D Applied sciences / 001D03 Electronics / 001D03F Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices / 001D03F01 Interfaces
- Discipline
- Electronics
- Origin
- Inist-CNRS
- Database
- PASCAL
- INIST identifier
- 7965324
Sauf mention contraire ci-dessus, le contenu de cette notice bibliographique peut être utilisé dans le cadre d’une licence CC BY 4.0 Inist-CNRS / Unless otherwise stated above, the content of this bibliographic record may be used under a CC BY 4.0 licence by Inist-CNRS / A menos que se haya señalado antes, el contenido de este registro bibliográfico puede ser utilizado al amparo de una licencia CC BY 4.0 Inist-CNRS
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DOI
10.1063/1.336900 
https://dx.doi.org/10.1063/1.336900
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