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Luminescence de polaritons de GaAs

Author
ZHILYAEV, YU. V1 ; MARKARYAN, G. R; ROSSIN, V. V; ROSSINA, T. V; TRAVNIKOV, V. V
[1] AN SSSR, fiziko-tekh. inst. im. A.F. Ioffe, Leningrad, Ussr
Source

Fizika tverdogo tela. = Solid state physics. 1986, Vol 28, Num 9, pp 2688-2695 ; ref : 20 ref

CODEN
FTVTAC
ISSN
0367-3294
Scientific domain
Crystallography; Electronics; Condensed state physics
Publisher
Nauka, Sankt-Peterburg
Publication country
Russian Federation
Document type
Article
Language
Russian
Keyword (fr)
Composé minéral Etude expérimentale Exciton Gallium Arséniure Photoluminescence Polariton Semiconducteur
Keyword (en)
Inorganic compound Experimental study Exciton Gallium Arsenides Photoluminescence Polariton Semiconductor materials
Keyword (es)
Compuesto mineral Estudio experimental Exciton Galio Fotoluminiscencia Polaritón Semiconductor(material)
Classification
Pascal
001 Exact sciences and technology / 001B Physics / 001B70 Condensed matter: electronic structure, electrical, magnetic, and optical properties / 001B70H Optical properties and condensed-matter spectroscopy and other interactions of matter with particles and radiation / 001B70H20 Optical properties of bulk materials and thin films

Discipline
Physics of condensed state : electronic structure, electrical, magnetic and optical properties
Origin
Inist-CNRS
Database
PASCAL
INIST identifier
7967612

Sauf mention contraire ci-dessus, le contenu de cette notice bibliographique peut être utilisé dans le cadre d’une licence CC BY 4.0 Inist-CNRS / Unless otherwise stated above, the content of this bibliographic record may be used under a CC BY 4.0 licence by Inist-CNRS / A menos que se haya señalado antes, el contenido de este registro bibliográfico puede ser utilizado al amparo de una licencia CC BY 4.0 Inist-CNRS

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