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Mécanismes d'absorption par les porteurs libres dans les chalcogénures de plomb-étain

Author
PETROVA, O. A; BARYSHEV, N. S; NESMELOVA, I. M
Source

Fizika i tehnika poluprovodnikov. = Physics and technics of semiconductors. 1986, Vol 20, Num 10, pp 1801-1805 ; ref : 25 ref

CODEN
FTPPA4
ISSN
0015-3222
Scientific domain
Electronics; Condensed state physics
Publisher
Nauka, Sankt-Peterburg
Publication country
Russian Federation
Document type
Article
Language
Russian
Keyword (fr)
Absorption optique Composition chimique Composé minéral Conductivité type n Diffusion porteur charge Etain Plomb Séléniure Mixte Etain Plomb Tellurure Mixte Etude expérimentale Hétérogénéité Phonon Porteur libre Semiconducteur Solution solide
Keyword (en)
Optical absorption Chemical composition Inorganic compound N type conductivity Charge carrier scattering Tin Lead Selenides Mixed Tin Lead Tellurides Mixed Experimental study Heterogeneity Phonon Free carrier Semiconductor materials Solid solution
Keyword (es)
Absorcion optica Composicion quimica Compuesto mineral Conductividad tipo n Difusión portador carga Estaño Estaño Estudio experimental Heterogeneidad Fonon Portador libre Semiconductor(material) Solución sólida
Classification
Pascal
001 Exact sciences and technology / 001B Physics / 001B70 Condensed matter: electronic structure, electrical, magnetic, and optical properties / 001B70H Optical properties and condensed-matter spectroscopy and other interactions of matter with particles and radiation / 001B70H30 Infrared and raman spectra and scattering

Discipline
Physics of condensed state : electronic structure, electrical, magnetic and optical properties
Origin
Inist-CNRS
Database
PASCAL
INIST identifier
8002213

Sauf mention contraire ci-dessus, le contenu de cette notice bibliographique peut être utilisé dans le cadre d’une licence CC BY 4.0 Inist-CNRS / Unless otherwise stated above, the content of this bibliographic record may be used under a CC BY 4.0 licence by Inist-CNRS / A menos que se haya señalado antes, el contenido de este registro bibliográfico puede ser utilizado al amparo de una licencia CC BY 4.0 Inist-CNRS

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