Direct measurement of the electric-field-dependent absorption coefficient in GaAs/AlGaAs multiple quantum wells
- Author
- WOOD, T. H1
[1] At & T Bell Laboratories, Holmdel NJ 07733, United States - Source
Applied physics letters. 1986, Vol 48, Num 21, pp 1413-1415 ; ref : 11 ref
- CODEN
- APPLAB
- ISSN
- 0003-6951
- Scientific domain
- Crystallography; Electronics; Optics; Condensed state physics
- Publisher
- American Institute of Physics, Melville, NY
- Publication country
- United States
- Document type
- Article
- Language
- English
- Keyword (fr)
- Absorption électrooptique Aluminium Gallium Arséniure Mixte Gallium Arséniure Hétérojonction Superréseau
- Keyword (en)
- Electrooptical absorption Aluminium Gallium Arsenides Mixed Gallium Arsenides Heterojunction Superlattice
- Keyword (es)
- Absorción electroóptica Aluminio Galio Heterounión Superred
- Classification
- Pascal
- 001 Exact sciences and technology / 001D Applied sciences / 001D03 Electronics / 001D03F Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices / 001D03F01 Interfaces
- Discipline
- Electronics
- Origin
- Inist-CNRS
- Database
- PASCAL
- INIST identifier
- 8011424
Sauf mention contraire ci-dessus, le contenu de cette notice bibliographique peut être utilisé dans le cadre d’une licence CC BY 4.0 Inist-CNRS / Unless otherwise stated above, the content of this bibliographic record may be used under a CC BY 4.0 licence by Inist-CNRS / A menos que se haya señalado antes, el contenido de este registro bibliográfico puede ser utilizado al amparo de una licencia CC BY 4.0 Inist-CNRS
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DOI
10.1063/1.96924 
https://dx.doi.org/10.1063/1.96924
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