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The stability of aluminium-doped ZnO transparent electrodes fabricated by sputtering

Author
TAKATA, S1 ; MINAMI, T; NANTO, H
[1] Kanazawa inst. technology, Ishikawa 921, Japan
Source

Thin solid films. 1986, Vol 135, Num 2, pp 182-187 ; ref : 7 ref

CODEN
THSFAP
ISSN
0040-6090
Scientific domain
Crystallography; Electronics; Metallurgy, welding; Condensed state physics
Publisher
Elsevier Science, Lausanne
Publication country
Switzerland
Document type
Article
Language
English
Keyword (fr)
Aluminium Atmosphère contrôlée Composé minéral Conductivité électrique Couche mince Etude expérimentale Impureté Mobilité Hall Préparation Pulvérisation cathodique Recuit Zinc Oxyde
Keyword (en)
Aluminium Controlled atmosphere Inorganic compound Electrical conductivity Thin film Experimental study Impurity Hall mobility Preparation Cathodic sputtering Annealing Zinc Oxides
Keyword (es)
Aluminio Atmosfera controlada Compuesto mineral Conductividad electrica Capa delgada Estudio experimental Impureza Movilidad Hall Preparacion Pulverización catódica Recocido Zinc
Classification
Pascal
001 Exact sciences and technology / 001B Physics / 001B70 Condensed matter: electronic structure, electrical, magnetic, and optical properties / 001B70B Electronic transport in condensed matter / 001B70B20 Conductivity phenomena in semiconductors and insulators / 001B70B20F Low-field transport and mobility; piezoresistance

Discipline
Physics of condensed state : electronic structure, electrical, magnetic and optical properties
Origin
Inist-CNRS
Database
PASCAL
INIST identifier
8019584

Sauf mention contraire ci-dessus, le contenu de cette notice bibliographique peut être utilisé dans le cadre d’une licence CC BY 4.0 Inist-CNRS / Unless otherwise stated above, the content of this bibliographic record may be used under a CC BY 4.0 licence by Inist-CNRS / A menos que se haya señalado antes, el contenido de este registro bibliográfico puede ser utilizado al amparo de una licencia CC BY 4.0 Inist-CNRS

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