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Directionally solidified Bi2O3-6Bi2O3•SiO2 eutectic

Author
KOKUBO, T1 ; KIM, H
[1] Kyoto univ., inst. chemical res., Kyoto-Fu 611, Japan
Source

Journal of materials science. 1986, Vol 21, Num 4, pp 1441-1447 ; ref : 10 ref

CODEN
JMTSAS
ISSN
0022-2461
Scientific domain
Chemical industry parachemical industry; Metallurgy, welding; Condensed state physics; Polymers, paint and wood industries
Publisher
Springer, Heidelberg
Publication country
Germany
Document type
Article
Language
English
Keyword (fr)
Composé minéral Cristallisation Diagramme phase Diffraction RX Etude expérimentale Eutectique Microscopie optique Microstructure Méthode phase fondue Silicium IV Oxyde Solidification dirigée
Keyword (en)
Inorganic compound Crystallization Phase diagram X ray diffraction Experimental study Eutectic Optical microscopy Microstructure Growth from melt Silicon IV Oxides Oriented solidification
Keyword (es)
Compuesto mineral Cristalizacion Diagrama de fase Difraccion RX Estudio experimental Eutéctico Microscopia optica Microestructura Método fase fundida Silicio IV Solidificación dirigida
Classification
Pascal
001 Exact sciences and technology / 001B Physics / 001B80 Cross-disciplinary physics: materials science; rheology / 001B80A Materials science / 001B80A10 Methods of crystal growth; physics of crystal growth / 001B80A10A Theory and models of crystal growth; physics of crystal growth, crystal morphology and orientation

Discipline
Physics and materials science
Origin
Inist-CNRS
Database
PASCAL
INIST identifier
8023934

Sauf mention contraire ci-dessus, le contenu de cette notice bibliographique peut être utilisé dans le cadre d’une licence CC BY 4.0 Inist-CNRS / Unless otherwise stated above, the content of this bibliographic record may be used under a CC BY 4.0 licence by Inist-CNRS / A menos que se haya señalado antes, el contenido de este registro bibliográfico puede ser utilizado al amparo de una licencia CC BY 4.0 Inist-CNRS

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