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Direct measurements of the velocity and thickness of explosively propagating buried molten layers in amorphous silicon

Author
LOWNDES, D. H1 ; JELLISON, G. E. JR; PENNYCOOK, S. J; WITHROW, S. P; MASHBURN, D. N
[1] Oak Ridge national lab., Oak Ridge TN 37831, United States
Source

Applied physics letters. 1986, Vol 48, Num 20, pp 1389-1391 ; ref : 18 ref

CODEN
APPLAB
ISSN
0003-6951
Scientific domain
Crystallography; Electronics; Optics; Condensed state physics
Publisher
American Institute of Physics, Melville, NY
Publication country
United States
Document type
Article
Language
English
Keyword (fr)
Amorphisation Couche enterrée Cuivre Ion atomique Etude expérimentale Faisceau laser Fusion Implantation ion Microscopie électronique balayage transmission Non métal Rayonnement IR Rayonnement visible Réflectivité Rétrodiffusion Rutherford Silicium
Keyword (en)
Amorphization Buried layer Copper Atomic ions Experimental study Laser beam Melting Ion implantation Scanning transmission electron microscopy Non metal Infrared radiation Visible radiation Reflectivity Rutherford backscattering Silicon
Keyword (es)
Amorfización Capa enterrada Cobre Estudio experimental Haz láser Fusion Implantación ión Microscopia electronica de barrido transmision No metal Radiacion infrarroja Radiacion invisible Reflectividad Retrodifusión Rutherford Silicio
Classification
Pascal
001 Exact sciences and technology / 001B Physics / 001B60 Condensed matter: structure, mechanical and thermal properties / 001B60A Structure of solids and liquids; crystallography / 001B60A72 Defects and impurities in crystals; microstructure / 001B60A72V Doping and impurity implantation in iii-v and ii-vi semiconductors

Discipline
Physics of condensed state : structure, mechanical and thermal properties
Origin
Inist-CNRS
Database
PASCAL
INIST identifier
8039143

Sauf mention contraire ci-dessus, le contenu de cette notice bibliographique peut être utilisé dans le cadre d’une licence CC BY 4.0 Inist-CNRS / Unless otherwise stated above, the content of this bibliographic record may be used under a CC BY 4.0 licence by Inist-CNRS / A menos que se haya señalado antes, el contenido de este registro bibliográfico puede ser utilizado al amparo de una licencia CC BY 4.0 Inist-CNRS

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