Performance and hot-carrier effects of small CRYO-CMOS devices
- Author
- AOKI, M1 ; HANAMURA, S; MASUHARA, T; YANO, K
[1] Hitachi ltd., Tokyo 185, Japan - Source
I.E.E.E. transactions on electron devices. 1987, Vol 34, Num 1, pp 8-18 ; ref : 34 ref
- CODEN
- IETDAI
- ISSN
- 0018-9383
- Scientific domain
- Electronics
- Publisher
- Institute of Electrical and Electronics Engineers, New York, NY
- Publication country
- United States
- Document type
- Article
- Language
- English
- Keyword (fr)
- Basse température Bore Caractéristique courant tension Circuit VLSI Circuit intégré Dopage Mobilité porteur charge Performance Porteur chaud Puissance Semiconductivité Seuil tension Silicium Technologie MOS complémentaire Temps retard Transconductance Transistor MOS
- Keyword (en)
- Low temperature Boron Voltage current curve VLSI circuit Integrated circuit Doping Charge carrier mobility Performance Hot carrier Power Semiconductivity Voltage threshold Silicon Complementary MOS technology Delay time Transconductance MOS transistor
- Keyword (es)
- Baja temperatura Boro Característica corriente tensión Circuito VLSI Circuito integrado Doping Movilidad portador carga Rendimiento Portador caliente Poder Semiconductividad Umbral tensión Silicio Tecnología MOS complementario Tiempo retardo Transconductancia Transistor MOS
- Classification
- Pascal
- 001 Exact sciences and technology / 001D Applied sciences / 001D03 Electronics / 001D03F Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices / 001D03F06 Integrated circuits
- Discipline
- Electronics
- Origin
- Inist-CNRS
- Database
- PASCAL
- INIST identifier
- 8070014
Sauf mention contraire ci-dessus, le contenu de cette notice bibliographique peut être utilisé dans le cadre d’une licence CC BY 4.0 Inist-CNRS / Unless otherwise stated above, the content of this bibliographic record may be used under a CC BY 4.0 licence by Inist-CNRS / A menos que se haya señalado antes, el contenido de este registro bibliográfico puede ser utilizado al amparo de una licencia CC BY 4.0 Inist-CNRS
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DOI
10.1109/T-ED.1987.22880 
https://dx.doi.org/10.1109/T-ED.1987.22880
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