Pascal and Francis Bibliographic Databases

Help

Permanent link : http://pascal-francis.inist.fr/vibad/index.php?action=getRecordDetail&idt=8070327

Export

Selection :

Diffusion of As and Ge during growth of GaAs on Ge substrate by molecular-beam epitaxy: its effects on the device electrical characteristics

Author
CHAND, N1 ; KLEM, J; HENDERSON, T; MORKOC, H
[1] Univ. Illinois Urbana-Champaign, coordinated sci. lab., Urbana IL 61801, United States
Source

Journal of applied physics. 1986, Vol 59, Num 10, pp 3601-3604 ; ref : 21 ref

CODEN
JAPIAU
ISSN
0021-8979
Scientific domain
Crystallography; Electronics; Optics; Condensed state physics; Physics
Publisher
American Institute of Physics, Woodbury, NY
Publication country
United States
Document type
Article
Language
English
Keyword (fr)
Caractéristique capacité tension Caractéristique courant tension Condensation faisceau moléculaire Croissance cristalline Diffusion chimique Epitaxie Gallium Arséniure Germanium Hétérojonction Réaction chimique
Keyword (en)
Voltage capacity curve Voltage current curve Molecular beam condensation Crystal growth Chemical diffusion Epitaxy Gallium Arsenides Germanium Heterojunction Chemical reaction
Keyword (es)
Característica capacidad tensión Característica corriente tensión Condensación haz molecular Crecimiento cristalino Difusión química Epitaxia Galio Germanio Heterounión Reaccion quimica
Classification
Pascal
001 Exact sciences and technology / 001D Applied sciences / 001D03 Electronics / 001D03F Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices / 001D03F01 Interfaces

Discipline
Electronics
Origin
Inist-CNRS
Database
PASCAL
INIST identifier
8070327

Sauf mention contraire ci-dessus, le contenu de cette notice bibliographique peut être utilisé dans le cadre d’une licence CC BY 4.0 Inist-CNRS / Unless otherwise stated above, the content of this bibliographic record may be used under a CC BY 4.0 licence by Inist-CNRS / A menos que se haya señalado antes, el contenido de este registro bibliográfico puede ser utilizado al amparo de una licencia CC BY 4.0 Inist-CNRS

Access to the document

Searching the Web