Extremely high quality Ga0.47In0.53As/InP quantum wells grown by chemical beam epitaxy
- Author
- TSANG, W. T1 ; SCHUBERT, E. F
[1] AT & Bell Laboratories, Holmdel NJ 07733, United States - Source
Applied physics letters. 1986, Vol 49, Num 4, pp 220-222 ; ref : 25 ref
- CODEN
- APPLAB
- ISSN
- 0003-6951
- Scientific domain
- Crystallography; Electronics; Optics; Condensed state physics
- Publisher
- American Institute of Physics, Melville, NY
- Publication country
- United States
- Document type
- Article
- Language
- English
- Keyword (fr)
- Epitaxie Gallium Indium Arséniure Mixte Hétérojonction Indium Phosphure Photoluminescence Puits quantique Qualité Très basse température
- Keyword (en)
- Epitaxy Gallium Indium Arsenides Mixed Heterojunction Indium Phosphides Photoluminescence Quantum well Quality Very low temperature
- Keyword (es)
- Epitaxia Galio Heterounión Indio Fotoluminiscencia Pozo cuántico Calidad Temperatura muy baja
- Classification
- Pascal
- 001 Exact sciences and technology / 001D Applied sciences / 001D03 Electronics / 001D03F Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices / 001D03F01 Interfaces
- Discipline
- Electronics
- Origin
- Inist-CNRS
- Database
- PASCAL
- INIST identifier
- 8085541
Sauf mention contraire ci-dessus, le contenu de cette notice bibliographique peut être utilisé dans le cadre d’une licence CC BY 4.0 Inist-CNRS / Unless otherwise stated above, the content of this bibliographic record may be used under a CC BY 4.0 licence by Inist-CNRS / A menos que se haya señalado antes, el contenido de este registro bibliográfico puede ser utilizado al amparo de una licencia CC BY 4.0 Inist-CNRS
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DOI
10.1063/1.97177 
https://dx.doi.org/10.1063/1.97177
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