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The positron as a probe for studying bulk and defect properties in semiconductors

Author
DLUBEK, G1 ; BRÜMMER, O
[1] Martin-Luther-univ. Halle, sekt. physik, Halle 4020, German Democratic Republic
Source

Annalen der Physik (Leipzig). 1986, Vol 43, Num 3-5, pp 178-186 ; ref : 19 ref

CODEN
ANPYA2
ISSN
0003-3804
Scientific domain
Physics
Publisher
Barth, Leipzig
Publication country
Germany
Document type
Article
Language
English
Keyword (fr)
Annihilation positon Composé III-V Composé minéral Défaut ponctuel Etude expérimentale Impureté Interaction Lacune
Keyword (en)
Positron annihilation III-V compound Inorganic compound Point defect Experimental study Impurity Interaction Vacancy
Keyword (es)
Aniquilación positón Compuesto III-V Compuesto mineral Defecto puntual Estudio experimental Impureza Interaccion Laguna
Classification
Pascal
001 Exact sciences and technology / 001B Physics / 001B60 Condensed matter: structure, mechanical and thermal properties / 001B60A Structure of solids and liquids; crystallography / 001B60A72 Defects and impurities in crystals; microstructure / 001B60A72J Point defects (vacancies, interstitials, color centers, etc.) and defect clusters

Discipline
Physics of condensed state : structure, mechanical and thermal properties
Origin
Inist-CNRS
Database
PASCAL
INIST identifier
8095948

Sauf mention contraire ci-dessus, le contenu de cette notice bibliographique peut être utilisé dans le cadre d’une licence CC BY 4.0 Inist-CNRS / Unless otherwise stated above, the content of this bibliographic record may be used under a CC BY 4.0 licence by Inist-CNRS / A menos que se haya señalado antes, el contenido de este registro bibliográfico puede ser utilizado al amparo de una licencia CC BY 4.0 Inist-CNRS

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