Thermal etching of GaAs by hydrogen under arsenic overpressure
- Author
- OKUBORA, A1 ; KASAHARA, J; ARAI, M; WATANABE, N
[1] Sony corp. Research Center, Hodogaya-ku Yokohama 240, Japan - Source
Journal of applied physics. 1986, Vol 60, Num 4, pp 1501-1504 ; ref : 15 ref
- CODEN
- JAPIAU
- ISSN
- 0021-8979
- Scientific domain
- Crystallography; Electronics; Optics; Condensed state physics; Physics
- Publisher
- American Institute of Physics, Woodbury, NY
- Publication country
- United States
- Document type
- Article
- Language
- English
- Keyword (fr)
- Fabrication microélectronique Gallium Arséniure Gravure Hydrogène Milieu gazeux Réaction chimique Vitesse réaction
- Keyword (en)
- Microelectronic fabrication Gallium Arsenides Engraving Hydrogen Gaseous medium Chemical reaction Reaction rate
- Keyword (es)
- Fabricación microeléctrica Galio Grabado Hidrógeno Medio gaseoso Reaccion quimica Velocidad reacción
- Classification
- Pascal
- 001 Exact sciences and technology / 001D Applied sciences / 001D03 Electronics / 001D03F Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices / 001D03F17 Microelectronic fabrication (materials and surfaces technology)
- Discipline
- Electronics
- Origin
- Inist-CNRS
- Database
- PASCAL
- INIST identifier
- 8146653
Sauf mention contraire ci-dessus, le contenu de cette notice bibliographique peut être utilisé dans le cadre d’une licence CC BY 4.0 Inist-CNRS / Unless otherwise stated above, the content of this bibliographic record may be used under a CC BY 4.0 licence by Inist-CNRS / A menos que se haya señalado antes, el contenido de este registro bibliográfico puede ser utilizado al amparo de una licencia CC BY 4.0 Inist-CNRS
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DOI
10.1063/1.337279 
https://dx.doi.org/10.1063/1.337279
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