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Direct preparation of γ-Fe2O3 thin film recording media by reactive R.F. sputtering technique

Author
OHTA, S1 ; TERADA, A
[1] NTT Tokai, Ibaraki 31911, Japan
Source

Thin solid films. 1986, Vol 143, Num 1, pp 73-82 ; ref : 17 ref

CODEN
THSFAP
ISSN
0040-6090
Scientific domain
Crystallography; Electronics; Metallurgy, welding; Condensed state physics
Publisher
Elsevier Science, Lausanne
Publication country
Switzerland
Document type
Article
Language
English
Keyword (fr)
Aimantation saturation Champ coercitif Composé minéral Conductivité électrique Couche mince Croissance cristalline Diffraction électron Enregistrement magnétique Etude expérimentale Fer III Oxyde Forme gamma Métal transition Composé Pulvérisation haute fréquence
Keyword (en)
Saturation magnetization Coercive force Inorganic compound Electrical conductivity Thin film Crystal growth Electron diffraction Magnetic recording Experimental study Iron III Oxides Gamma form Transition metal Compounds Radiofrequency sputtering
Keyword (es)
Imanación saturación Campo coercitivo Compuesto mineral Conductividad electrica Capa delgada Crecimiento cristalino Difraccion electronica Grabación magnética Estudio experimental Hierro III Forma gamma Metal transición Pulverización alta frecuencia
Classification
Pascal
001 Exact sciences and technology / 001B Physics / 001B60 Condensed matter: structure, mechanical and thermal properties / 001B60H Surfaces and interfaces; thin films and whiskers (structure and nonelectronic properties) / 001B60H55 Thin film structure and morphology

Discipline
Physics of condensed state : structure, mechanical and thermal properties
Origin
Inist-CNRS
Database
PASCAL
INIST identifier
8153948

Sauf mention contraire ci-dessus, le contenu de cette notice bibliographique peut être utilisé dans le cadre d’une licence CC BY 4.0 Inist-CNRS / Unless otherwise stated above, the content of this bibliographic record may be used under a CC BY 4.0 licence by Inist-CNRS / A menos que se haya señalado antes, el contenido de este registro bibliográfico puede ser utilizado al amparo de una licencia CC BY 4.0 Inist-CNRS

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