Conductivity in heavily doped and compensated epitaxial gallium arsenide layers
- Autor
- EVTIMOVA, S. K1 ; DOBREGO, V. P
[1] Sofia univ., semiconductor physics technology res. lab., Sofia 1126, Bulgaria - Fuente
Semiconductor science and technology. 1986, Vol 1, Num 2, pp 161-166 ; ref : 26 ref
- CODEN
- SSTEET
- ISSN
- 0268-1242
- Campo Científico
- Electronics; Optics; Condensed state physics
- Editor
- Institute of Physics, Bristol
- País de la publicación
- United Kingdom
- Tipo de documento
- Article
- Idioma
- English
- Palabra clave (fr)
- Basse température Champ intense Champ électrique Chrome Composé minéral Conductivité saut Conductivité électrique Densité état Energie activation Etude expérimentale Gallium Arséniure Germanium Impureté Localisation électronique Niveau Fermi Semiconducteur compensé Tellure Température Conductivité type n Conductivité type p
- Palabra clave (in)
- Low temperature High field Electric field Chromium Inorganic compound Hopping conductivity Electrical conductivity Density of states Activation energy Experimental study Gallium Arsenides Germanium Impurity Electron localization Fermi level Compensated semiconductor Tellurium Temperature
- Palabra clave (es)
- Baja temperatura Campo intenso Campo electrico Cromo Compuesto mineral Conductividad salto Conductividad electrica Densidad estado Activacion de energia Estudio experimental Galio Germanio Impureza Localización electrónica Nivel Fermi Semiconductor compensado Teluro Temperatura
- Clasificación
- Pascal
- 001 Exact sciences and technology / 001B Physics / 001B70 Condensed matter: electronic structure, electrical, magnetic, and optical properties / 001B70B Electronic transport in condensed matter / 001B70B20 Conductivity phenomena in semiconductors and insulators
- Disciplina
- Physics of condensed state : electronic structure, electrical, magnetic and optical properties
- Procedencia
- Inist-CNRS
- Base de datos
- PASCAL
- Identificador INIST
- 8176265
Sauf mention contraire ci-dessus, le contenu de cette notice bibliographique peut être utilisé dans le cadre d’une licence CC BY 4.0 Inist-CNRS / Unless otherwise stated above, the content of this bibliographic record may be used under a CC BY 4.0 licence by Inist-CNRS / A menos que se haya señalado antes, el contenido de este registro bibliográfico puede ser utilizado al amparo de una licencia CC BY 4.0 Inist-CNRS
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DOI
10.1088/0268-1242/1/2/011 
https://dx.doi.org/10.1088/0268-1242/1/2/011
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