Channelled-substrate buried-heterostructure InGaAsP/InP laser with semi-insulating OMVPE base structure and LPE regrowth
- Author
- WILT, D. P1 ; LONG, J; DAUTREMONT-SMITH, W. C; FOCHT, M. W; SHEN, T. M; HARTMAN, R. L
[1] AT&T Bell Laboratories, Murray Hill NJ 07974, United States - Source
Electronics Letters. 1986, Vol 22, Num 16, pp 869-870 ; ref : 7 ref
- CODEN
- ELLEAK
- ISSN
- 0013-5194
- Scientific domain
- Electronics; Optics; Telecommunications
- Publisher
- Institution of Electrical Engineers, London
- Publication country
- United Kingdom
- Document type
- Article
- Language
- English
- Keyword (fr)
- Hétérojonction Laser semiconducteur Laser enterré
- Keyword (en)
- Heterojunction Buried laser Semiconductor laser
- Keyword (es)
- Heterounión Láser semiconductor
- Classification
- Pascal
- 001 Exact sciences and technology / 001B Physics / 001B40 Fundamental areas of phenomenology (including applications) / 001B40B Optics / 001B40B55 Lasers / 001B40B55P Semiconductor lasers; laser diodes
- Discipline
- Physics : optics
- Origin
- Inist-CNRS
- Database
- PASCAL
- INIST identifier
- 8180601
Sauf mention contraire ci-dessus, le contenu de cette notice bibliographique peut être utilisé dans le cadre d’une licence CC BY 4.0 Inist-CNRS / Unless otherwise stated above, the content of this bibliographic record may be used under a CC BY 4.0 licence by Inist-CNRS / A menos que se haya señalado antes, el contenido de este registro bibliográfico puede ser utilizado al amparo de una licencia CC BY 4.0 Inist-CNRS
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DOI
10.1049/el:19860594 
https://dx.doi.org/10.1049/el:19860594
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