Electrical and optical properties of chemically vapour deposited fluorine doped SnO2 films
- Autor
- RAGHUNATH REDDY, S1 ; MALLIK, A. K; JAWALEKAR, S. R
[1] Indian inst. technology, Bombay 400 076, India - Fuente
Physica status solidi. A. Applied research. 1986, Vol 96, Num 2, pp K191-K194 ; ref : 9 ref
- CODEN
- PSSABA
- ISSN
- 0031-8965
- Campo Científico
- Crystallography; Electronics; Metallurgy, welding; Condensed state physics
- Editor
- Wiley-VCH, Berlin
- País de la publicación
- Germany
- Tipo de documento
- Article
- Idioma
- English
- Palabra clave (fr)
- Absorption visible Composé minéral Concentration porteur charge Couche mince Dopage Dépôt chimique phase vapeur Effet Hall Etain Oxyde Etude expérimentale Fluor Mobilité porteur charge Préparation
- Palabra clave (in)
- Visible absorption Inorganic compound Charge carrier concentration Thin film Doping Chemical vapor deposition Hall effect Tin Oxides Experimental study Fluorine Charge carrier mobility Preparation
- Palabra clave (es)
- Absorción visible Compuesto mineral Concentración portador carga Capa delgada Doping Depósito químico fase vapor Efecto Hall Estaño Estudio experimental Fluor Movilidad portador carga Preparacion
- Clasificación
- Pascal
- 001 Exact sciences and technology / 001B Physics / 001B70 Condensed matter: electronic structure, electrical, magnetic, and optical properties / 001B70B Electronic transport in condensed matter / 001B70B20 Conductivity phenomena in semiconductors and insulators
- Disciplina
- Physics of condensed state : electronic structure, electrical, magnetic and optical properties
- Procedencia
- Inist-CNRS
- Base de datos
- PASCAL
- Identificador INIST
- 8189458
Sauf mention contraire ci-dessus, le contenu de cette notice bibliographique peut être utilisé dans le cadre d’une licence CC BY 4.0 Inist-CNRS / Unless otherwise stated above, the content of this bibliographic record may be used under a CC BY 4.0 licence by Inist-CNRS / A menos que se haya señalado antes, el contenido de este registro bibliográfico puede ser utilizado al amparo de una licencia CC BY 4.0 Inist-CNRS
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DOI
10.1002/pssa.2210960258 
https://dx.doi.org/10.1002/pssa.2210960258
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