The role of the device surface in the high voltage behaviour of the GaAs MESFET
- Author
- BARTON, T. M1 ; LADBROOKE, P. H
[1] GEC Research Laboratories, Wembley Middx, United Kingdom - Source
Solid-state electronics. 1986, Vol 29, Num 8, pp 807-813 ; ref : 18 ref
- ISSN
- 0038-1101
- Scientific domain
- Electronics
- Publisher
- Elsevier Science, Oxford
- Publication country
- United Kingdom
- Document type
- Article
- Language
- English
- Keyword (fr)
- Gallium Arséniure Transistor effet champ barrière Schottky Transistor effet champ
- Keyword (en)
- Gallium Arsenides Metal semiconductor field effect transistor Field effect transistor
- Keyword (es)
- Galio Transistor efecto campo barrera Schottky Transistor efecto campo
- Classification
- Pascal
- 001 Exact sciences and technology / 001D Applied sciences / 001D03 Electronics / 001D03F Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices / 001D03F04 Transistors
- Discipline
- Electronics
- Origin
- Inist-CNRS
- Database
- PASCAL
- INIST identifier
- 8204752
Sauf mention contraire ci-dessus, le contenu de cette notice bibliographique peut être utilisé dans le cadre d’une licence CC BY 4.0 Inist-CNRS / Unless otherwise stated above, the content of this bibliographic record may be used under a CC BY 4.0 licence by Inist-CNRS / A menos que se haya señalado antes, el contenido de este registro bibliográfico puede ser utilizado al amparo de una licencia CC BY 4.0 Inist-CNRS
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DOI
10.1016/0038-1101(86)90183-8 
https://dx.doi.org/10.1016/0038-1101(86)90183-8
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