Electron spin resonance in disordered metals
- Autor
- SUBIR SACHDEV1
[1] AT&T Bell Laboratories, Murray Hill NJ 07974, United States - Fuente
Physical review. B, Condensed matter. 1986, Vol 34, Num 8, pp 6049-6052 ; part 2 ; ref : 16 ref
- CODEN
- PRBMDO
- ISSN
- 0163-1829
- Campo Científico
- Crystallography; Metallurgy, welding; Condensed state physics
- Editor
- American Institute of Physics, Woodbury, NY
/
American Physical Society, Woodbury, NY
- País de la publicación
- United States
- Tipo de documento
- Article
- Idioma
- English
- Palabra clave (fr)
- Electron conduction Etude théorique Impureté Interaction électronique Phosphore Résonance paramagnétique électronique Semiconducteur Silicium Système désordonné
- Palabra clave (in)
- Conduction electron Theoretical study Impurity Electron interaction Phosphorus Electron paramagnetic resonance Semiconductor materials Silicon Disordered system
- Palabra clave (es)
- Electrón conducción Estudio teórico Impureza Interaccion electronica Fósforo Resonancia paramagnética electrónica Semiconductor(material) Silicio Sistema desordenado
- Clasificación
- Pascal
- 001 Exact sciences and technology / 001B Physics / 001B70 Condensed matter: electronic structure, electrical, magnetic, and optical properties / 001B70F Magnetic resonances and relaxations in condensed matter, mössbauer effect / 001B70F30 Electron paramagnetic resonance and relaxation / 001B70F30P Conduction electrons
- Disciplina
- Physics of condensed state : electronic structure, electrical, magnetic and optical properties
- Procedencia
- Inist-CNRS
- Base de datos
- PASCAL
- Identificador INIST
- 8217206
Sauf mention contraire ci-dessus, le contenu de cette notice bibliographique peut être utilisé dans le cadre d’une licence CC BY 4.0 Inist-CNRS / Unless otherwise stated above, the content of this bibliographic record may be used under a CC BY 4.0 licence by Inist-CNRS / A menos que se haya señalado antes, el contenido de este registro bibliográfico puede ser utilizado al amparo de una licencia CC BY 4.0 Inist-CNRS
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DOI
10.1103/PhysRevB.34.6049 
https://dx.doi.org/10.1103/PhysRevB.34.6049
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