Time-of-flight studies of minority-carrier diffusion in AlxGa1-xAs homojunctions
- Author
- AHRENKIEL, R. K1 ; DUNLAVY, D. J; HAMAKER, H. C; GREEN, R. T; LEWIS, C. R; HAYES, R. E; FARDI, H
[1] Solar energy res. inst., Golden CO 80401, United States - Source
Applied physics letters. 1986, Vol 49, Num 12, pp 725-727 ; ref : 4 ref
- CODEN
- APPLAB
- ISSN
- 0003-6951
- Scientific domain
- Crystallography; Electronics; Optics; Condensed state physics
- Publisher
- American Institute of Physics, Melville, NY
- Publication country
- United States
- Document type
- Article
- Language
- English
- Keyword (fr)
- Aluminium Gallium Arséniure Mixte Diffusion porteur charge Durée vie Jonction p n Jonction Méthode temps vol Porteur minoritaire
- Keyword (en)
- Aluminium Gallium Arsenides Mixed Charge carrier scattering Lifetime P n junction Junction Time of flight method Minority carrier
- Keyword (es)
- Aluminio Difusión portador carga Tiempo vida Unión p n Reunion Método tiempo vuelo Portador minoritario
- Classification
- Pascal
- 001 Exact sciences and technology / 001D Applied sciences / 001D03 Electronics / 001D03F Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices / 001D03F01 Interfaces
- Discipline
- Electronics
- Origin
- Inist-CNRS
- Database
- PASCAL
- INIST identifier
- 8223582
Sauf mention contraire ci-dessus, le contenu de cette notice bibliographique peut être utilisé dans le cadre d’une licence CC BY 4.0 Inist-CNRS / Unless otherwise stated above, the content of this bibliographic record may be used under a CC BY 4.0 licence by Inist-CNRS / A menos que se haya señalado antes, el contenido de este registro bibliográfico puede ser utilizado al amparo de una licencia CC BY 4.0 Inist-CNRS
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DOI
10.1063/1.97580 
https://dx.doi.org/10.1063/1.97580
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