Photoluminescence d'hétérostructures InGaAsP/GaAs à effet dimensionnel quantique obtenues par la méthode d'épitaxie en phase liquide
- Author
- ALFEROV, ZH. I1 ; ANTONISHKIS, N. YU; ARSENT'EV, I. N; GARBUZOV, D. Z; KRASOVSKIJ, V. V
[1] AN SSSR, fiziko-tekh. inst. im. A.F. Ioffe, Leningrad, Ussr - Source
Fizika i tehnika poluprovodnikov. = Physics and technics of semiconductors. 1986, Vol 20, Num 12, pp 2145-2149 ; ref : 12 ref
- CODEN
- FTPPA4
- ISSN
- 0015-3222
- Scientific domain
- Electronics; Condensed state physics
- Publisher
- Nauka, Sankt-Peterburg
- Publication country
- Russian Federation
- Document type
- Article
- Language
- Russian
- Keyword (fr)
- Effet dimensionnel quantique Gallium Arséniure Gallium Indium Phosphoarséniure Hétérojonction Photoluminescence
- Keyword (en)
- Quantum size effect Gallium Arsenides Gallium Indium Arsenides phosphides Heterojunction Photoluminescence
- Keyword (es)
- Efecto dimensional cuántico Galio Galio Heterounión Fotoluminiscencia
- Classification
- Pascal
- 001 Exact sciences and technology / 001D Applied sciences / 001D03 Electronics / 001D03F Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices / 001D03F01 Interfaces
- Discipline
- Electronics
- Origin
- Inist-CNRS
- Database
- PASCAL
- INIST identifier
- 8228923
Sauf mention contraire ci-dessus, le contenu de cette notice bibliographique peut être utilisé dans le cadre d’une licence CC BY 4.0 Inist-CNRS / Unless otherwise stated above, the content of this bibliographic record may be used under a CC BY 4.0 licence by Inist-CNRS / A menos que se haya señalado antes, el contenido de este registro bibliográfico puede ser utilizado al amparo de una licencia CC BY 4.0 Inist-CNRS
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