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Photoluminescence d'hétérostructures InGaAsP/GaAs à effet dimensionnel quantique obtenues par la méthode d'épitaxie en phase liquide

Author
ALFEROV, ZH. I1 ; ANTONISHKIS, N. YU; ARSENT'EV, I. N; GARBUZOV, D. Z; KRASOVSKIJ, V. V
[1] AN SSSR, fiziko-tekh. inst. im. A.F. Ioffe, Leningrad, Ussr
Source

Fizika i tehnika poluprovodnikov. = Physics and technics of semiconductors. 1986, Vol 20, Num 12, pp 2145-2149 ; ref : 12 ref

CODEN
FTPPA4
ISSN
0015-3222
Scientific domain
Electronics; Condensed state physics
Publisher
Nauka, Sankt-Peterburg
Publication country
Russian Federation
Document type
Article
Language
Russian
Keyword (fr)
Effet dimensionnel quantique Gallium Arséniure Gallium Indium Phosphoarséniure Hétérojonction Photoluminescence
Keyword (en)
Quantum size effect Gallium Arsenides Gallium Indium Arsenides phosphides Heterojunction Photoluminescence
Keyword (es)
Efecto dimensional cuántico Galio Galio Heterounión Fotoluminiscencia
Classification
Pascal
001 Exact sciences and technology / 001D Applied sciences / 001D03 Electronics / 001D03F Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices / 001D03F01 Interfaces

Discipline
Electronics
Origin
Inist-CNRS
Database
PASCAL
INIST identifier
8228923

Sauf mention contraire ci-dessus, le contenu de cette notice bibliographique peut être utilisé dans le cadre d’une licence CC BY 4.0 Inist-CNRS / Unless otherwise stated above, the content of this bibliographic record may be used under a CC BY 4.0 licence by Inist-CNRS / A menos que se haya señalado antes, el contenido de este registro bibliográfico puede ser utilizado al amparo de una licencia CC BY 4.0 Inist-CNRS

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