Annealing of plasma silicon oxynitride films
- Autor
- DENISSE, C. M. M1 ; TROOST, K. Z; HABRAKEN, F. H. P. M; VAN DER WEG, W. F; HENDRIKS, M
[1] Utrecht state univ., tech. physics dep., Utrecht TA 3508, Netherlands - Fuente
Journal of applied physics. 1986, Vol 60, Num 7, pp 2543-2547 ; ref : 17 ref
- CODEN
- JAPIAU
- ISSN
- 0021-8979
- Campo Científico
- Crystallography; Electronics; Optics; Condensed state physics; Physics
- Editor
- American Institute of Physics, Woodbury, NY
- País de la publicación
- United States
- Tipo de documento
- Article
- Idioma
- English
- Palabra clave (fr)
- Composé minéral Couche mince Dépôt chimique phase vapeur Etude expérimentale Liaison chimique Plasma Recuit Réaction nucléaire Silicium Oxynitrure Spectre RPE Spectrométrie absorption IR Stabilité thermique Transformation Fourier
- Palabra clave (in)
- Inorganic compound Thin film Chemical vapor deposition Experimental study Chemical bond Plasma Annealing Nuclear reaction Silicon Nitrides oxides EPR spectrum Infrared absorption spectrometry Thermal stability Fourier transformation
- Palabra clave (es)
- Compuesto mineral Capa delgada Depósito químico fase vapor Estudio experimental Enlace químico Plasma Recocido Reacción nuclear Silicio Espectro RPE Espectrometría absorción IR Estabilidad termica Transformacion Fourier
- Clasificación
- Pascal
- 001 Exact sciences and technology / 001B Physics / 001B60 Condensed matter: structure, mechanical and thermal properties / 001B60H Surfaces and interfaces; thin films and whiskers (structure and nonelectronic properties) / 001B60H60 Physical properties of thin films, nonelectronic
- Disciplina
- Physics of condensed state : structure, mechanical and thermal properties
- Procedencia
- Inist-CNRS
- Base de datos
- PASCAL
- Identificador INIST
- 8232619
Sauf mention contraire ci-dessus, le contenu de cette notice bibliographique peut être utilisé dans le cadre d’une licence CC BY 4.0 Inist-CNRS / Unless otherwise stated above, the content of this bibliographic record may be used under a CC BY 4.0 licence by Inist-CNRS / A menos que se haya señalado antes, el contenido de este registro bibliográfico puede ser utilizado al amparo de una licencia CC BY 4.0 Inist-CNRS
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DOI
10.1063/1.337118 
https://dx.doi.org/10.1063/1.337118
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