The regrowth of implantation damage in silicon studied via silver depth profiling
- Author
- WILSON, R. G1
[1] Hughes Research Laboratories, Malibu CA 90265, United States - Source
Journal of applied physics. 1986, Vol 60, Num 8, pp 2810-2813 ; ref : 5 ref
- CODEN
- JAPIAU
- ISSN
- 0021-8979
- Scientific domain
- Crystallography; Electronics; Optics; Condensed state physics; Physics
- Publisher
- American Institute of Physics, Woodbury, NY
- Publication country
- United States
- Document type
- Article
- Language
- English
- Keyword (fr)
- Amorphisation Argent Ion atomique Distribution impureté Etude expérimentale Implantation ion Non métal Recristallisation Recuit thermique Rétrodiffusion Rutherford Silicium Spectrométrie SIMS
- Keyword (en)
- Amorphization Silver Atomic ions Impurity distribution Experimental study Ion implantation Non metal Recrystallization Thermal annealing Rutherford backscattering Silicon Secondary ion mass spectrometry
- Keyword (es)
- Amorfización Plata Distribución impureza Estudio experimental Implantación ión No metal Recristalización Recocido térmico Retrodifusión Rutherford Silicio Espectrometría SIMS
- Classification
- Pascal
- 001 Exact sciences and technology / 001B Physics / 001B60 Condensed matter: structure, mechanical and thermal properties / 001B60A Structure of solids and liquids; crystallography / 001B60A72 Defects and impurities in crystals; microstructure / 001B60A72V Doping and impurity implantation in iii-v and ii-vi semiconductors
- Discipline
- Physics of condensed state : structure, mechanical and thermal properties
- Origin
- Inist-CNRS
- Database
- PASCAL
- INIST identifier
- 8236149
Sauf mention contraire ci-dessus, le contenu de cette notice bibliographique peut être utilisé dans le cadre d’une licence CC BY 4.0 Inist-CNRS / Unless otherwise stated above, the content of this bibliographic record may be used under a CC BY 4.0 licence by Inist-CNRS / A menos que se haya señalado antes, el contenido de este registro bibliográfico puede ser utilizado al amparo de una licencia CC BY 4.0 Inist-CNRS
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DOI
10.1063/1.337062 
https://dx.doi.org/10.1063/1.337062
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