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Particularités de la capacité de barrière de structures p+-n en régime d'injection

Author
EREMIN, V. K1 ; IVANOV, A. M; STROKAN, N. B
[1] AN SSSR, fiziko-tekh. inst. im. A.F. Ioffe, Leningrad, Ussr
Source

Fizika i tehnika poluprovodnikov. = Physics and technics of semiconductors. 1987, Vol 21, Num 2, pp 291-295 ; ref : 5 ref

CODEN
FTPPA4
ISSN
0015-3222
Scientific domain
Electronics; Condensed state physics
Publisher
Nauka, Sankt-Peterburg
Publication country
Russian Federation
Document type
Article
Language
Russian
Keyword (fr)
Barrière potentiel Capacité électrique Injection porteur charge Jonction p+ n Jonction
Keyword (en)
Potential barrier Capacitance Charge carrier injection P+ n junction Junction
Keyword (es)
Barrera potencial Capacitancia Inyección portador carga Unión p+ n Reunion
Classification
Pascal
001 Exact sciences and technology / 001D Applied sciences / 001D03 Electronics / 001D03F Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices / 001D03F01 Interfaces

Discipline
Electronics
Origin
Inist-CNRS
Database
PASCAL
INIST identifier
8251619

Sauf mention contraire ci-dessus, le contenu de cette notice bibliographique peut être utilisé dans le cadre d’une licence CC BY 4.0 Inist-CNRS / Unless otherwise stated above, the content of this bibliographic record may be used under a CC BY 4.0 licence by Inist-CNRS / A menos que se haya señalado antes, el contenido de este registro bibliográfico puede ser utilizado al amparo de una licencia CC BY 4.0 Inist-CNRS

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