Improved recombination lifetime of photoexcited carriers in GaAs single quantum well heterostructures confined by GaAs/AlAs short-period superlattices
- Author
- FUJIWARA, K1 ; NAKAMURA, A; TOKUDA, Y; NAKAYAMA, T; HIRAI, M
[1] Mitsubishi Electric corp., Hyogo 661, Japan - Source
Applied physics letters. 1986, Vol 49, Num 18, pp 1193-1195 ; ref : 10 ref
- CODEN
- APPLAB
- ISSN
- 0003-6951
- Scientific domain
- Crystallography; Electronics; Optics; Condensed state physics
- Publisher
- American Institute of Physics, Melville, NY
- Publication country
- United States
- Document type
- Article
- Language
- English
- Keyword (fr)
- Aluminium Gallium Arséniure Mixte Durée vie Déclin luminescence Gallium Arséniure Hétérojonction Photoexcitation UV Photoluminescence Recombinaison porteur charge Superréseau
- Keyword (en)
- Aluminium Gallium Arsenides Mixed Lifetime Luminescence decay Gallium Arsenides Heterojunction Ultraviolet photoexcitation Photoluminescence Charge carrier recombination Superlattice
- Keyword (es)
- Aluminio Tiempo vida Decadencia luminiscencia Galio Heterounión Fotoexcitación UV Fotoluminiscencia Recombinación portador carga Superred
- Classification
- Pascal
- 001 Exact sciences and technology / 001D Applied sciences / 001D03 Electronics / 001D03F Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices / 001D03F01 Interfaces
- Discipline
- Electronics
- Origin
- Inist-CNRS
- Database
- PASCAL
- INIST identifier
- 8259034
Sauf mention contraire ci-dessus, le contenu de cette notice bibliographique peut être utilisé dans le cadre d’une licence CC BY 4.0 Inist-CNRS / Unless otherwise stated above, the content of this bibliographic record may be used under a CC BY 4.0 licence by Inist-CNRS / A menos que se haya señalado antes, el contenido de este registro bibliográfico puede ser utilizado al amparo de una licencia CC BY 4.0 Inist-CNRS
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DOI
10.1063/1.97411 
https://dx.doi.org/10.1063/1.97411
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