The rapid measurement of generation lifetime in MOS capacitors with long relaxation times
- Author
- KELLER, W. W1
[1] Siemens A.G., Munich 8000, Germany - Source
I.E.E.E. transactions on electron devices. 1987, Vol 34, Num 5, pp 1141-1146 ; 2 ; ref : 10 ref
- CODEN
- IETDAI
- ISSN
- 0018-9383
- Scientific domain
- Electronics
- Publisher
- Institute of Electrical and Electronics Engineers, New York, NY
- Publication country
- United States
- Document type
- Article
- Language
- English
- Keyword (fr)
- Capacité MOS Caractéristique capacité tension Durée vie Génération Mesure Porteur minoritaire Structure MOS Temps relaxation
- Keyword (en)
- MOS capacity Voltage capacity curve Lifetime Generation Measurement Minority carrier MOS structure Relaxation time
- Keyword (es)
- Capacidad MOS Característica capacidad tensión Tiempo vida Generación Medida Portador minoritario Estructura MOS Tiempo de relajacion
- Classification
- Pascal
- 001 Exact sciences and technology / 001D Applied sciences / 001D03 Electronics / 001D03F Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices / 001D03F01 Interfaces
- Discipline
- Electronics
- Origin
- Inist-CNRS
- Database
- PASCAL
- INIST identifier
- 8271462
Sauf mention contraire ci-dessus, le contenu de cette notice bibliographique peut être utilisé dans le cadre d’une licence CC BY 4.0 Inist-CNRS / Unless otherwise stated above, the content of this bibliographic record may be used under a CC BY 4.0 licence by Inist-CNRS / A menos que se haya señalado antes, el contenido de este registro bibliográfico puede ser utilizado al amparo de una licencia CC BY 4.0 Inist-CNRS
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DOI
10.1109/T-ED.1987.23056 
https://dx.doi.org/10.1109/T-ED.1987.23056
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