Fabrication and performance of GaN electronic devices
- Author
- PEARTON, S. J1 ; REN, F2 ; ZHANG, A. P2 ; LEE, K. P1
[1] Department of Materials Science and Engineering, University of Florida, Gainesville, FL 32611, United States
[2] Department of Chemical Engineering, University of Florida, Gainesville, FL 32611, United States - Source
Materials science & engineering. R, Reports. 2000, Vol 30, Num 3-6, pp 55-212 ; ref : 306 ref
- ISSN
- 0927-796X
- Scientific domain
- Crystallography; Mechanics acoustics; Metallurgy, welding; Condensed state physics
- Publisher
- Elsevier Science, Lausanne
- Publication country
- Switzerland
- Document type
- Article
- Language
- English
- Keyword (fr)
- Aluminium nitrure Article synthèse Barrière Schottky Caractéristique électrique Contact ohmique Dispositif semiconducteur Electronique puissance Etat actuel Gallium nitrure Performance système Procédé fabrication Redresseur Transistor MOSFET Transistor bipolaire hétérojonction Transistor effet champ Al Ga N AlGaN Ga N GaN
- Keyword (en)
- Aluminium nitride Review Schottky barrier Electrical characteristic Ohmic contact Semiconductor device Power electronics State of the art Gallium nitride System performance Manufacturing process Rectifier MOSFET Heterojunction bipolar transistors Field effect transistor
- Keyword (es)
- Aluminio nitruro Artículo síntesis Barrera Schottky Característica eléctrica Contacto óhmico Dispositivo semiconductor Electrónica potencia Estado actual Galio nitruro Eficacia sistema Procedimiento fabricación Rectificador Transistor efecto campo
- Classification
- Pascal
- 001 Exact sciences and technology / 001D Applied sciences / 001D03 Electronics / 001D03F Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices / 001D03F22 Miscellaneous
- Discipline
- Electronics
- Origin
- Inist-CNRS
- Database
- PASCAL
- INIST identifier
- 827489
Sauf mention contraire ci-dessus, le contenu de cette notice bibliographique peut être utilisé dans le cadre d’une licence CC BY 4.0 Inist-CNRS / Unless otherwise stated above, the content of this bibliographic record may be used under a CC BY 4.0 licence by Inist-CNRS / A menos que se haya señalado antes, el contenido de este registro bibliográfico puede ser utilizado al amparo de una licencia CC BY 4.0 Inist-CNRS
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DOI
10.1016/S0927-796X(00)00028-0 
https://dx.doi.org/10.1016/S0927-796X(00)00028-0
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