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Dislocation filtering in semiconductor superlattices with lattice-matched and lattice-mismatched layer materials

Author
GOURLEY, P. L1 ; DRUMMOND, T. J; DOYLE, B. L
[1] Sandia National Laboratories, Albuquerque NM 87185, United States
Source

Applied physics letters. 1986, Vol 49, Num 17, pp 1101-1103 ; ref : 12 ref

CODEN
APPLAB
ISSN
0003-6951
Scientific domain
Crystallography; Electronics; Optics; Condensed state physics
Publisher
American Institute of Physics, Melville, NY
Publication country
United States
Document type
Article
Language
English
Keyword (fr)
Accommodation réseau Aluminium Indium Arséniure Mixte Composé minéral Couche mince Diffraction RX Dislocation Epitaxie Etude expérimentale Gallium Indium Arséniure Mixte Superréseau
Keyword (en)
Mismatch lattice Aluminium Indium Arsenides Mixed Inorganic compound Thin film X ray diffraction Dislocation Epitaxy Experimental study Gallium Indium Arsenides Mixed Superlattice
Keyword (es)
Acomodación red Aluminio Compuesto mineral Capa delgada Difraccion RX Dislocación Epitaxia Estudio experimental Galio Superred
Classification
Pascal
001 Exact sciences and technology / 001B Physics / 001B60 Condensed matter: structure, mechanical and thermal properties / 001B60H Surfaces and interfaces; thin films and whiskers (structure and nonelectronic properties) / 001B60H55 Thin film structure and morphology

Discipline
Physics of condensed state : structure, mechanical and thermal properties
Origin
Inist-CNRS
Database
PASCAL
INIST identifier
8283857

Sauf mention contraire ci-dessus, le contenu de cette notice bibliographique peut être utilisé dans le cadre d’une licence CC BY 4.0 Inist-CNRS / Unless otherwise stated above, the content of this bibliographic record may be used under a CC BY 4.0 licence by Inist-CNRS / A menos que se haya señalado antes, el contenido de este registro bibliográfico puede ser utilizado al amparo de una licencia CC BY 4.0 Inist-CNRS

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