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Modulation de la charge d'espace des structures isolant-semiconducteur obtenues dans le système GaAs-AlAs

Author
IL'ICHEV, EH. A; POLTORATSKIJ, EH. A
Source

Fizika i tehnika poluprovodnikov. = Physics and technics of semiconductors. 1986, Vol 20, Num 10, pp 1782-1786 ; ref : 9 ref

CODEN
FTPPA4
ISSN
0015-3222
Scientific domain
Electronics; Condensed state physics
Publisher
Nauka, Sankt-Peterburg
Publication country
Russian Federation
Document type
Article
Language
Russian
Keyword (fr)
Aluminium Gallium Arséniure Mixte Transistor effet champ grille isolée Transistor effet champ
Keyword (en)
Aluminium Gallium Arsenides Mixed Isolated gate field effect transistor Field effect transistor
Keyword (es)
Aluminio Transistor efecto campo rejilla aislada Transistor efecto campo
Classification
Pascal
001 Exact sciences and technology / 001D Applied sciences / 001D03 Electronics / 001D03F Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices / 001D03F04 Transistors

Discipline
Electronics
Origin
Inist-CNRS
Database
PASCAL
INIST identifier
8330615

Sauf mention contraire ci-dessus, le contenu de cette notice bibliographique peut être utilisé dans le cadre d’une licence CC BY 4.0 Inist-CNRS / Unless otherwise stated above, the content of this bibliographic record may be used under a CC BY 4.0 licence by Inist-CNRS / A menos que se haya señalado antes, el contenido de este registro bibliográfico puede ser utilizado al amparo de una licencia CC BY 4.0 Inist-CNRS

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