Pascal and Francis Bibliographic Databases

Help

Permanent link : http://pascal-francis.inist.fr/vibad/index.php?action=getRecordDetail&idt=8330639

Export

Selection :

Dipole-induced changes of the band discontinuities at the SiO2-Si interface

Author
PERFETTI, P1 ; QUARESIMA, C; COLUZZA, C; FORTUNATO, C; MARGARITONDO, G
[1] Ist. struttura materia, Frascati 00044, Italy
Source

Physical review letters. 1986, Vol 57, Num 16, pp 2065-2068 ; ref : 25 ref

CODEN
PRLTAO
ISSN
0031-9007
Scientific domain
Optics; Atomic molecular physics; Condensed state physics; Physics; Plasma physics
Publisher
American Physical Society, Ridge, NY
Publication country
United States
Document type
Article
Language
English
Keyword (fr)
Couche transition Césium Hydrogène Interface Semiconducteur Silicium Oxyde Silicium Structure bande
Keyword (en)
Transition layer Cesium Hydrogen Interface Semiconductor materials Silicon Oxides Silicon Band structure
Keyword (es)
Capa transición Cesio Hidrógeno Interface Semiconductor(material) Silicio Silicio Estructura banda
Classification
Pascal
001 Exact sciences and technology / 001D Applied sciences / 001D03 Electronics / 001D03F Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices / 001D03F01 Interfaces

Discipline
Electronics
Origin
Inist-CNRS
Database
PASCAL
INIST identifier
8330639

Sauf mention contraire ci-dessus, le contenu de cette notice bibliographique peut être utilisé dans le cadre d’une licence CC BY 4.0 Inist-CNRS / Unless otherwise stated above, the content of this bibliographic record may be used under a CC BY 4.0 licence by Inist-CNRS / A menos que se haya señalado antes, el contenido de este registro bibliográfico puede ser utilizado al amparo de una licencia CC BY 4.0 Inist-CNRS

Access to the document

Searching the Web