Theoretical analysis of the oscillatory diffusivity-mobility ratio in n-channel inversion layers on ternary chalcopyrite semiconductors in the presence of a quantizing magnetic field
- Author
- MONDAL, M1 ; GHATAK, K. P
[1] Univ. Calcutta, coll. sci. technology, Calcutta 700 009, India - Source
Journal of magnetism and magnetic materials. 1986, Vol 62, Num 1, pp 115-119 ; ref : 19 ref
- CODEN
- JMMMDC
- ISSN
- 0304-8853
- Scientific domain
- Electronics; Condensed state physics
- Publisher
- Elsevier Science, Amsterdam
- Publication country
- Netherlands
- Document type
- Article
- Language
- English
- Keyword (fr)
- Cadmium Germanium Arséniure Mixte Champ magnétique quantifiant Couche inversion Jonction Mobilité porteur charge Oscillation
- Keyword (en)
- Cadmium Germanium Arsenides Mixed Quantum magnetic field Inversion layer Junction Charge carrier mobility Oscillation
- Keyword (es)
- Cadmio Campo magnético cuantitativo Capa inversión Reunion Movilidad portador carga Oscilacion
- Classification
- Pascal
- 001 Exact sciences and technology / 001D Applied sciences / 001D03 Electronics / 001D03F Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices / 001D03F01 Interfaces
- Discipline
- Electronics
- Origin
- Inist-CNRS
- Database
- PASCAL
- INIST identifier
- 8334516
Sauf mention contraire ci-dessus, le contenu de cette notice bibliographique peut être utilisé dans le cadre d’une licence CC BY 4.0 Inist-CNRS / Unless otherwise stated above, the content of this bibliographic record may be used under a CC BY 4.0 licence by Inist-CNRS / A menos que se haya señalado antes, el contenido de este registro bibliográfico puede ser utilizado al amparo de una licencia CC BY 4.0 Inist-CNRS
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DOI
10.1016/0304-8853(86)90743-2 
https://dx.doi.org/10.1016/0304-8853(86)90743-2
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