Intrinsic SiO2 film stress measurements on thermally oxidized Si
- Autor
- KOBEDA, E1 ; IRENE, E. A
[1] Univ. North Carolina, dep. chemistry, Chapel Hill NC 27514, United States - Fuente
Journal of vacuum science and technology. B. Microelectronics processing and phenomena. 1987, Vol 5, Num 1, pp 15-19 ; ref : 34 ref
- CODEN
- JVTBD9
- ISSN
- 0734-211X
- Campo Científico
- Electronics; Computer science
- Editor
- American Institute of Physics, New York, NY
- País de la publicación
- United States
- Tipo de documento
- Article
- Idioma
- English
- Palabra clave (fr)
- Composé minéral Contrainte interne Couche mince Etude expérimentale Orientation cristalline Oxydation Silicium Oxyde Traitement thermique
- Palabra clave (in)
- Inorganic compound Internal stress Thin film Experimental study Crystal orientation Oxidation Silicon Oxides Heat treatment
- Palabra clave (es)
- Compuesto mineral Tensión interna Capa delgada Estudio experimental Orientación cristalina Oxidacion Silicio Tratamiento termico
- Clasificación
- Pascal
- 001 Exact sciences and technology / 001B Physics / 001B60 Condensed matter: structure, mechanical and thermal properties / 001B60H Surfaces and interfaces; thin films and whiskers (structure and nonelectronic properties) / 001B60H60 Physical properties of thin films, nonelectronic
- Disciplina
- Physics of condensed state : structure, mechanical and thermal properties
- Procedencia
- Inist-CNRS
- Base de datos
- PASCAL
- Identificador INIST
- 8350117
Sauf mention contraire ci-dessus, le contenu de cette notice bibliographique peut être utilisé dans le cadre d’une licence CC BY 4.0 Inist-CNRS / Unless otherwise stated above, the content of this bibliographic record may be used under a CC BY 4.0 licence by Inist-CNRS / A menos que se haya señalado antes, el contenido de este registro bibliográfico puede ser utilizado al amparo de una licencia CC BY 4.0 Inist-CNRS
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DOI
10.1116/1.583853 
https://dx.doi.org/10.1116/1.583853
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