Analytic model of applied-B ion diode impedance behavior
- Author
- MILLER, P. A1 ; MENDEL, C. W. JR
[1] Sandia National Laboratories, Albuquerque NM 87185, United States - Source
Journal of applied physics. 1987, Vol 61, Num 2, pp 529-539 ; ref : 34 ref
- CODEN
- JAPIAU
- ISSN
- 0021-8979
- Scientific domain
- Crystallography; Electronics; Optics; Condensed state physics; Physics
- Publisher
- American Institute of Physics, Woodbury, NY
- Publication country
- United States
- Document type
- Article
- Language
- English
- Keyword (fr)
- Diode Impédance Source ion
- Keyword (en)
- Diode Impedance Ion source
- Keyword (es)
- Diodo Impedancia Fuente ión
- Classification
- Pascal
- 001 Exact sciences and technology / 001B Physics / 001B50 Physics of gases, plasmas and electric discharges / 001B50B Physics of plasmas and electric discharges / 001B50B75 Plasma devices
- Discipline
- Physics of gases, plasmas and electric discharges
- Origin
- Inist-CNRS
- Database
- PASCAL
- INIST identifier
- 8358358
Sauf mention contraire ci-dessus, le contenu de cette notice bibliographique peut être utilisé dans le cadre d’une licence CC BY 4.0 Inist-CNRS / Unless otherwise stated above, the content of this bibliographic record may be used under a CC BY 4.0 licence by Inist-CNRS / A menos que se haya señalado antes, el contenido de este registro bibliográfico puede ser utilizado al amparo de una licencia CC BY 4.0 Inist-CNRS
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DOI
10.1063/1.338253 
https://dx.doi.org/10.1063/1.338253
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