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Direct evidence for substitutional ion-implanted indium dopants in silicon

Author
LINDNER, G1 ; HOFSÄSS, H; WINTER, S; BESOLD, B; RECKNAGEL, E; WEYER, G; PETERSEN, J. W
[1] Univ. Konstanz, fak. physik, Konstanz 7750, Germany
Source

Physical review letters. 1986, Vol 57, Num 18, pp 2283-2286 ; ref : 19 ref

CODEN
PRLTAO
ISSN
0031-9007
Scientific domain
Optics; Atomic molecular physics; Condensed state physics; Physics; Plasma physics
Publisher
American Physical Society, Ridge, NY
Publication country
United States
Document type
Article
Language
English
Classification
Pascal
001 Exact sciences and technology / 001D Applied sciences / 001D17 Other techniques and industries

Discipline
Generalities in applied sciences
Origin
Inist-CNRS
Database
PASCAL
INIST identifier
8365231

Sauf mention contraire ci-dessus, le contenu de cette notice bibliographique peut être utilisé dans le cadre d’une licence CC BY 4.0 Inist-CNRS / Unless otherwise stated above, the content of this bibliographic record may be used under a CC BY 4.0 licence by Inist-CNRS / A menos que se haya señalado antes, el contenido de este registro bibliográfico puede ser utilizado al amparo de una licencia CC BY 4.0 Inist-CNRS

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