Niveaux de donneurs thermiques dans le silicium dans les conditions de dérormation élastique uniaxiale
- Autor
- BABICH, V. M1 ; DOTSENKO, YU. P; ZOTOV, K. I; KOVAL'CHUK, V. B
[1] AN USSR, inst. poluprovodnikov, Kiev, Ukraine - Fuente
Fizika i tehnika poluprovodnikov. = Physics and technics of semiconductors. 1987, Vol 21, Num 6, pp 996-1000 ; ref : 22 ref
- CODEN
- FTPPA4
- ISSN
- 0015-3222
- Campo Científico
- Electronics; Condensed state physics
- Editor
- Nauka, Sankt-Peterburg
- País de la publicación
- Russian Federation
- Tipo de documento
- Article
- Idioma
- Russian
- Palabra clave (fr)
- Centre donneur Décomposition niveau Déformation uniaxiale Etat fondamental Etude expérimentale Niveau impureté Oxygène Potentiel déformation Potentiel ionisation Semiconducteur Silicium Traitement thermique
- Palabra clave (in)
- Donor center Level splitting Uniaxial strain Ground state Experimental study Impurity level Oxygen Deformation potential Ionization potential Semiconductor materials Silicon Heat treatment
- Palabra clave (es)
- Centro dador Descomposición nivel Deformación uniaxial Estado fundamental Estudio experimental Nivel impureza Oxígeno Potencial deformación Potencial de ionización Semiconductor(material) Silicio Tratamiento termico
- Clasificación
- Pascal
- 001 Exact sciences and technology / 001B Physics / 001B70 Condensed matter: electronic structure, electrical, magnetic, and optical properties / 001B70A Electron states / 001B70A60 Positron states
- Disciplina
- Physics of condensed state : electronic structure, electrical, magnetic and optical properties
- Procedencia
- Inist-CNRS
- Base de datos
- PASCAL
- Identificador INIST
- 8366346
Sauf mention contraire ci-dessus, le contenu de cette notice bibliographique peut être utilisé dans le cadre d’une licence CC BY 4.0 Inist-CNRS / Unless otherwise stated above, the content of this bibliographic record may be used under a CC BY 4.0 licence by Inist-CNRS / A menos que se haya señalado antes, el contenido de este registro bibliográfico puede ser utilizado al amparo de una licencia CC BY 4.0 Inist-CNRS
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