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Direct resolution and identification of the sublattices in compound semiconductors by high-resolution transmission electron microscopy
- Author
-
OURMAZD, A1 ; RENTSCHLER, J. R; TAYLOR, D. W
[1] AT&T Bell Laboratories, Holmdel NJ 07733, United States - Source
-
Physical review letters. 1986, Vol 57, Num 24, pp 3073-3076 ; ref : 3 ref
- CODEN
- PRLTAO
- ISSN
- 0031-9007
- Scientific domain
- Optics; Atomic molecular physics; Condensed state physics; Physics; Plasma physics
- Publisher
-
American Physical Society, Ridge, NY
- Publication country
- United States
- Document type
-
Article
- Language
- English
- Classification
-
- Pascal
- 001 Exact sciences and technology / 001D Applied sciences / 001D17 Other techniques and industries
- Discipline
- Generalities in applied sciences
- Origin
-
Inist-CNRS
- Database
- PASCAL
- INIST identifier
- 8378289
Sauf mention contraire ci-dessus, le contenu de cette notice bibliographique peut être utilisé dans le cadre d’une licence CC BY 4.0 Inist-CNRS / Unless otherwise stated above, the content of this bibliographic record may be used under a CC BY 4.0 licence by Inist-CNRS / A menos que se haya señalado antes, el contenido de este registro bibliográfico puede ser utilizado al amparo de una licencia CC BY 4.0 Inist-CNRS
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"O:13:\"PanistOpenUrl\":36:{s:10:\"\u0000*\u0000openUrl\";N;s:6:\"\u0000*\u0000idc\";N;s:6:\"\u0000*\u0000fmt\";s:7:\"journal\";s:6:\"\u0000*\u0000doi\";s:0:\"\";s:6:\"\u0000*\u0000pii\";s:0:\"\";s:7:\"\u0000*\u0000pmid\";s:0:\"\";s:9:\"\u0000*\u0000atitle\";s:134:\"Direct resolution and identification of the sublattices in compound semiconductors by high-resolution transmission electron microscopy\";s:9:\"\u0000*\u0000jtitle\";s:23:\"Physical review letters\";s:9:\"\u0000*\u0000stitle\";s:15:\"Phys. rev. lett\";s:7:\"\u0000*\u0000date\";s:4:\"1986\";s:9:\"\u0000*\u0000volume\";s:2:\"57\";s:8:\"\u0000*\u0000issue\";s:2:\"24\";s:8:\"\u0000*\u0000spage\";s:4:\"3073\";s:8:\"\u0000*\u0000epage\";s:4:\"3076\";s:8:\"\u0000*\u0000pages\";s:0:\"\";s:7:\"\u0000*\u0000issn\";s:9:\"0031-9007\";s:8:\"\u0000*\u0000eissn\";s:0:\"\";s:9:\"\u0000*\u0000aulast\";s:7:\"OURMAZD\";s:10:\"\u0000*\u0000aufirst\";s:1:\"A\";s:9:\"\u0000*\u0000auinit\";s:0:\"\";s:10:\"\u0000*\u0000auinitm\";s:0:\"\";s:5:\"\u0000*\u0000au\";a:2:{i:0;s:16:\"RENTSCHLER, J. R\";i:1;s:12:\"TAYLOR, D. W\";}s:9:\"\u0000*\u0000aucorp\";s:0:\"\";s:7:\"\u0000*\u0000isbn\";s:0:\"\";s:8:\"\u0000*\u0000coden\";s:6:\"PRLTAO\";s:8:\"\u0000*\u0000genre\";s:7:\"article\";s:7:\"\u0000*\u0000part\";s:0:\"\";s:9:\"\u0000*\u0000btitle\";s:0:\"\";s:8:\"\u0000*\u0000title\";s:134:\"Direct resolution and identification of the sublattices in compound semiconductors by high-resolution transmission electron microscopy\";s:8:\"\u0000*\u0000place\";s:9:\"Ridge, NY\";s:6:\"\u0000*\u0000pub\";s:25:\"American Physical Society\";s:10:\"\u0000*\u0000edition\";s:0:\"\";s:9:\"\u0000*\u0000tpages\";s:0:\"\";s:9:\"\u0000*\u0000series\";s:0:\"\";s:8:\"\u0000*\u0000proxy\";s:30:\"http:\/\/proxyout.inist.fr:8080\/\";s:12:\"\u0000*\u0000integrite\";b:1;}"
https://api.panist.fr/document/openurl?ctx_ver=Z39.88-2004&ctx_enc=info:ofi/enc:UTF-8&rft_val_fmt=info:ofi/fmt:kev:mtx:journal&rft.atitle=Direct%20resolution%20and%20identification%20of%20the%20sublattices%20in%20compound%20semiconductors%20by%20high-resolution%20transmission%20electron%20microscopy&rft.jtitle=Physical%20review%20letters&rft.date=1986&rft.volume=57&rft.issue=24&rft.spage=3073&rft.epage=3076&rft.issn=0031-9007&rft.aulast=OURMAZD&rft.aufirst=A&fmt.au=%22%26rft.ut%3DRENTSCHLER%2C%20J.%20R%2C%20A%26rft.ua%3DTAYLOR%2C%20D.%20W%2C%20A%22&noredirect&sid=vibad
Panist access
"O:12:\"IstexOpenUrl\":35:{s:10:\"\u0000*\u0000openUrl\";N;s:6:\"\u0000*\u0000fmt\";s:7:\"journal\";s:6:\"\u0000*\u0000doi\";s:0:\"\";s:6:\"\u0000*\u0000pii\";s:0:\"\";s:7:\"\u0000*\u0000pmid\";s:0:\"\";s:9:\"\u0000*\u0000atitle\";s:134:\"Direct resolution and identification of the sublattices in compound semiconductors by high-resolution transmission electron microscopy\";s:9:\"\u0000*\u0000jtitle\";s:23:\"Physical review letters\";s:9:\"\u0000*\u0000stitle\";s:15:\"Phys. rev. lett\";s:7:\"\u0000*\u0000date\";s:4:\"1986\";s:9:\"\u0000*\u0000volume\";s:2:\"57\";s:8:\"\u0000*\u0000issue\";s:2:\"24\";s:8:\"\u0000*\u0000spage\";s:4:\"3073\";s:8:\"\u0000*\u0000epage\";s:4:\"3076\";s:8:\"\u0000*\u0000pages\";s:0:\"\";s:7:\"\u0000*\u0000issn\";s:9:\"0031-9007\";s:8:\"\u0000*\u0000eissn\";s:0:\"\";s:9:\"\u0000*\u0000aulast\";s:7:\"OURMAZD\";s:10:\"\u0000*\u0000aufirst\";s:1:\"A\";s:9:\"\u0000*\u0000auinit\";s:0:\"\";s:10:\"\u0000*\u0000auinitm\";s:0:\"\";s:5:\"\u0000*\u0000au\";a:2:{i:0;s:16:\"RENTSCHLER, J. R\";i:1;s:12:\"TAYLOR, D. W\";}s:9:\"\u0000*\u0000aucorp\";s:0:\"\";s:7:\"\u0000*\u0000isbn\";s:0:\"\";s:8:\"\u0000*\u0000coden\";s:6:\"PRLTAO\";s:8:\"\u0000*\u0000genre\";s:7:\"article\";s:7:\"\u0000*\u0000part\";s:0:\"\";s:9:\"\u0000*\u0000btitle\";s:0:\"\";s:8:\"\u0000*\u0000title\";s:134:\"Direct resolution and identification of the sublattices in compound semiconductors by high-resolution transmission electron microscopy\";s:8:\"\u0000*\u0000place\";s:9:\"Ridge, NY\";s:6:\"\u0000*\u0000pub\";s:25:\"American Physical Society\";s:10:\"\u0000*\u0000edition\";s:0:\"\";s:9:\"\u0000*\u0000tpages\";s:0:\"\";s:9:\"\u0000*\u0000series\";s:0:\"\";s:8:\"\u0000*\u0000proxy\";s:30:\"http:\/\/proxyout.inist.fr:8080\/\";s:12:\"\u0000*\u0000integrite\";b:1;}"
Istex access
"O:10:\"HalOpenUrl\":35:{s:10:\"\u0000*\u0000openUrl\";N;s:6:\"\u0000*\u0000fmt\";s:7:\"journal\";s:6:\"\u0000*\u0000doi\";s:0:\"\";s:6:\"\u0000*\u0000pii\";s:0:\"\";s:7:\"\u0000*\u0000pmid\";s:0:\"\";s:9:\"\u0000*\u0000atitle\";s:134:\"Direct resolution and identification of the sublattices in compound semiconductors by high-resolution transmission electron microscopy\";s:9:\"\u0000*\u0000jtitle\";s:23:\"Physical review letters\";s:9:\"\u0000*\u0000stitle\";s:15:\"Phys. rev. lett\";s:7:\"\u0000*\u0000date\";s:4:\"1986\";s:9:\"\u0000*\u0000volume\";s:2:\"57\";s:8:\"\u0000*\u0000issue\";s:2:\"24\";s:8:\"\u0000*\u0000spage\";s:4:\"3073\";s:8:\"\u0000*\u0000epage\";s:4:\"3076\";s:8:\"\u0000*\u0000pages\";s:0:\"\";s:7:\"\u0000*\u0000issn\";s:9:\"0031-9007\";s:8:\"\u0000*\u0000eissn\";s:0:\"\";s:9:\"\u0000*\u0000aulast\";s:7:\"OURMAZD\";s:10:\"\u0000*\u0000aufirst\";s:1:\"A\";s:9:\"\u0000*\u0000auinit\";s:0:\"\";s:10:\"\u0000*\u0000auinitm\";s:0:\"\";s:5:\"\u0000*\u0000au\";a:2:{i:0;s:16:\"RENTSCHLER, J. R\";i:1;s:12:\"TAYLOR, D. W\";}s:9:\"\u0000*\u0000aucorp\";s:0:\"\";s:7:\"\u0000*\u0000isbn\";s:0:\"\";s:8:\"\u0000*\u0000coden\";s:6:\"PRLTAO\";s:8:\"\u0000*\u0000genre\";s:7:\"article\";s:7:\"\u0000*\u0000part\";s:0:\"\";s:9:\"\u0000*\u0000btitle\";s:0:\"\";s:8:\"\u0000*\u0000title\";s:134:\"Direct resolution and identification of the sublattices in compound semiconductors by high-resolution transmission electron microscopy\";s:8:\"\u0000*\u0000place\";s:9:\"Ridge, NY\";s:6:\"\u0000*\u0000pub\";s:25:\"American Physical Society\";s:10:\"\u0000*\u0000edition\";s:0:\"\";s:9:\"\u0000*\u0000tpages\";s:0:\"\";s:9:\"\u0000*\u0000series\";s:0:\"\";s:8:\"\u0000*\u0000proxy\";s:30:\"http:\/\/proxyout.inist.fr:8080\/\";s:12:\"\u0000*\u0000integrite\";b:1;}"
Hal access
"O:16:\"EuropePMCOpenUrl\":35:{s:10:\"\u0000*\u0000openUrl\";N;s:6:\"\u0000*\u0000fmt\";s:7:\"journal\";s:6:\"\u0000*\u0000doi\";s:0:\"\";s:6:\"\u0000*\u0000pii\";s:0:\"\";s:7:\"\u0000*\u0000pmid\";s:0:\"\";s:9:\"\u0000*\u0000atitle\";s:134:\"Direct resolution and identification of the sublattices in compound semiconductors by high-resolution transmission electron microscopy\";s:9:\"\u0000*\u0000jtitle\";s:23:\"Physical review letters\";s:9:\"\u0000*\u0000stitle\";s:15:\"Phys. rev. lett\";s:7:\"\u0000*\u0000date\";s:4:\"1986\";s:9:\"\u0000*\u0000volume\";s:2:\"57\";s:8:\"\u0000*\u0000issue\";s:2:\"24\";s:8:\"\u0000*\u0000spage\";s:4:\"3073\";s:8:\"\u0000*\u0000epage\";s:4:\"3076\";s:8:\"\u0000*\u0000pages\";s:0:\"\";s:7:\"\u0000*\u0000issn\";s:9:\"0031-9007\";s:8:\"\u0000*\u0000eissn\";s:0:\"\";s:9:\"\u0000*\u0000aulast\";s:7:\"OURMAZD\";s:10:\"\u0000*\u0000aufirst\";s:1:\"A\";s:9:\"\u0000*\u0000auinit\";s:0:\"\";s:10:\"\u0000*\u0000auinitm\";s:0:\"\";s:5:\"\u0000*\u0000au\";a:2:{i:0;s:16:\"RENTSCHLER, J. R\";i:1;s:12:\"TAYLOR, D. W\";}s:9:\"\u0000*\u0000aucorp\";s:0:\"\";s:7:\"\u0000*\u0000isbn\";s:0:\"\";s:8:\"\u0000*\u0000coden\";s:6:\"PRLTAO\";s:8:\"\u0000*\u0000genre\";s:7:\"article\";s:7:\"\u0000*\u0000part\";s:0:\"\";s:9:\"\u0000*\u0000btitle\";s:0:\"\";s:8:\"\u0000*\u0000title\";s:134:\"Direct resolution and identification of the sublattices in compound semiconductors by high-resolution transmission electron microscopy\";s:8:\"\u0000*\u0000place\";s:9:\"Ridge, NY\";s:6:\"\u0000*\u0000pub\";s:25:\"American Physical Society\";s:10:\"\u0000*\u0000edition\";s:0:\"\";s:9:\"\u0000*\u0000tpages\";s:0:\"\";s:9:\"\u0000*\u0000series\";s:0:\"\";s:8:\"\u0000*\u0000proxy\";s:30:\"http:\/\/proxyout.inist.fr:8080\/\";s:12:\"\u0000*\u0000integrite\";b:1;}"
Europe PubMed Central access
"O:11:\"BaseOpenUrl\":35:{s:10:\"\u0000*\u0000openUrl\";N;s:6:\"\u0000*\u0000fmt\";s:7:\"journal\";s:6:\"\u0000*\u0000doi\";s:0:\"\";s:6:\"\u0000*\u0000pii\";s:0:\"\";s:7:\"\u0000*\u0000pmid\";s:0:\"\";s:9:\"\u0000*\u0000atitle\";s:134:\"Direct resolution and identification of the sublattices in compound semiconductors by high-resolution transmission electron microscopy\";s:9:\"\u0000*\u0000jtitle\";s:23:\"Physical review letters\";s:9:\"\u0000*\u0000stitle\";s:15:\"Phys. rev. lett\";s:7:\"\u0000*\u0000date\";s:4:\"1986\";s:9:\"\u0000*\u0000volume\";s:2:\"57\";s:8:\"\u0000*\u0000issue\";s:2:\"24\";s:8:\"\u0000*\u0000spage\";s:4:\"3073\";s:8:\"\u0000*\u0000epage\";s:4:\"3076\";s:8:\"\u0000*\u0000pages\";s:0:\"\";s:7:\"\u0000*\u0000issn\";s:9:\"0031-9007\";s:8:\"\u0000*\u0000eissn\";s:0:\"\";s:9:\"\u0000*\u0000aulast\";s:7:\"OURMAZD\";s:10:\"\u0000*\u0000aufirst\";s:1:\"A\";s:9:\"\u0000*\u0000auinit\";s:0:\"\";s:10:\"\u0000*\u0000auinitm\";s:0:\"\";s:5:\"\u0000*\u0000au\";a:2:{i:0;s:16:\"RENTSCHLER, J. R\";i:1;s:12:\"TAYLOR, D. W\";}s:9:\"\u0000*\u0000aucorp\";s:0:\"\";s:7:\"\u0000*\u0000isbn\";s:0:\"\";s:8:\"\u0000*\u0000coden\";s:6:\"PRLTAO\";s:8:\"\u0000*\u0000genre\";s:7:\"article\";s:7:\"\u0000*\u0000part\";s:0:\"\";s:9:\"\u0000*\u0000btitle\";s:0:\"\";s:8:\"\u0000*\u0000title\";s:134:\"Direct resolution and identification of the sublattices in compound semiconductors by high-resolution transmission electron microscopy\";s:8:\"\u0000*\u0000place\";s:9:\"Ridge, NY\";s:6:\"\u0000*\u0000pub\";s:25:\"American Physical Society\";s:10:\"\u0000*\u0000edition\";s:0:\"\";s:9:\"\u0000*\u0000tpages\";s:0:\"\";s:9:\"\u0000*\u0000series\";s:0:\"\";s:8:\"\u0000*\u0000proxy\";s:30:\"http:\/\/proxyout.inist.fr:8080\/\";s:12:\"\u0000*\u0000integrite\";b:1;}"
Base Search access
"O:12:\"ArXivOpenUrl\":35:{s:10:\"\u0000*\u0000openUrl\";N;s:6:\"\u0000*\u0000fmt\";s:7:\"journal\";s:6:\"\u0000*\u0000doi\";s:0:\"\";s:6:\"\u0000*\u0000pii\";s:0:\"\";s:7:\"\u0000*\u0000pmid\";s:0:\"\";s:9:\"\u0000*\u0000atitle\";s:134:\"Direct resolution and identification of the sublattices in compound semiconductors by high-resolution transmission electron microscopy\";s:9:\"\u0000*\u0000jtitle\";s:23:\"Physical review letters\";s:9:\"\u0000*\u0000stitle\";s:15:\"Phys. rev. lett\";s:7:\"\u0000*\u0000date\";s:4:\"1986\";s:9:\"\u0000*\u0000volume\";s:2:\"57\";s:8:\"\u0000*\u0000issue\";s:2:\"24\";s:8:\"\u0000*\u0000spage\";s:4:\"3073\";s:8:\"\u0000*\u0000epage\";s:4:\"3076\";s:8:\"\u0000*\u0000pages\";s:0:\"\";s:7:\"\u0000*\u0000issn\";s:9:\"0031-9007\";s:8:\"\u0000*\u0000eissn\";s:0:\"\";s:9:\"\u0000*\u0000aulast\";s:7:\"OURMAZD\";s:10:\"\u0000*\u0000aufirst\";s:1:\"A\";s:9:\"\u0000*\u0000auinit\";s:0:\"\";s:10:\"\u0000*\u0000auinitm\";s:0:\"\";s:5:\"\u0000*\u0000au\";a:2:{i:0;s:16:\"RENTSCHLER, J. R\";i:1;s:12:\"TAYLOR, D. W\";}s:9:\"\u0000*\u0000aucorp\";s:0:\"\";s:7:\"\u0000*\u0000isbn\";s:0:\"\";s:8:\"\u0000*\u0000coden\";s:6:\"PRLTAO\";s:8:\"\u0000*\u0000genre\";s:7:\"article\";s:7:\"\u0000*\u0000part\";s:0:\"\";s:9:\"\u0000*\u0000btitle\";s:0:\"\";s:8:\"\u0000*\u0000title\";s:134:\"Direct resolution and identification of the sublattices in compound semiconductors by high-resolution transmission electron microscopy\";s:8:\"\u0000*\u0000place\";s:9:\"Ridge, NY\";s:6:\"\u0000*\u0000pub\";s:25:\"American Physical Society\";s:10:\"\u0000*\u0000edition\";s:0:\"\";s:9:\"\u0000*\u0000tpages\";s:0:\"\";s:9:\"\u0000*\u0000series\";s:0:\"\";s:8:\"\u0000*\u0000proxy\";s:30:\"http:\/\/proxyout.inist.fr:8080\/\";s:12:\"\u0000*\u0000integrite\";b:1;}"
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