An optical imaging method for wafer warpage measurements
- Autor
- YANG, K. H
IBM, east fishkill facility - Fuente
Journal of the Electrochemical Society. 1985, Vol 132, Num 5, pp 1214-1218 ; ref : 10 ref
- CODEN
- JESOAN
- ISSN
- 0013-4651
- Campo Científico
- General chemistry, physical chemistry; Crystallography; Electrical engineering; Condensed state physics
- Editor
- Electrochemical Society, Pennington, NJ
- País de la publicación
- United States
- Tipo de documento
- Article
- Idioma
- English
- Palabra clave (fr)
- Composé minéral Contrainte thermique Contrainte Couche mince Etude expérimentale Formation image Gauchissement Méthode mesure Méthode optique Pastille (électronique) Rayon X Rayon courbure Silicium Nitrure Structure MOS Surface Technologie MOS
- Palabra clave (in)
- Inorganic compound Thermal stress Constraint Thin film Experimental study Imaging Warping Measurement method Optical method Wafer X ray Radius of curvature Silicon Nitrides MOS structure Surface MOS technology
- Palabra clave (es)
- Estudio experimental Rayos X
- Clasificación
- Pascal
- 001 Exact sciences and technology / 001B Physics / 001B60 Condensed matter: structure, mechanical and thermal properties / 001B60H Surfaces and interfaces; thin films and whiskers (structure and nonelectronic properties) / 001B60H60 Physical properties of thin films, nonelectronic
- Disciplina
- Physics of condensed state : structure, mechanical and thermal properties
- Procedencia
- Inist-CNRS
- Base de datos
- PASCAL
- Identificador INIST
- 8428875
Sauf mention contraire ci-dessus, le contenu de cette notice bibliographique peut être utilisé dans le cadre d’une licence CC BY 4.0 Inist-CNRS / Unless otherwise stated above, the content of this bibliographic record may be used under a CC BY 4.0 licence by Inist-CNRS / A menos que se haya señalado antes, el contenido de este registro bibliográfico puede ser utilizado al amparo de una licencia CC BY 4.0 Inist-CNRS
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DOI
10.1149/1.2114066 
https://dx.doi.org/10.1149/1.2114066
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