Autodoping of epitaxial silicon layers(II) diffusion-induced autodoping
- Autor
- KUHNE, H; GAWORZEWSKI, P; MALZE, W
Akad. wiss. DDR, inst. halbleiterphysik - Fuente
Crystal research and technology (1979). 1985, Vol 20, Num 5, pp 635-644 ; ref : 10 ref
- CODEN
- CRTEDF
- ISSN
- 0232-1300
- Campo Científico
- Crystallography; Geology; Metallurgy, welding
- Editor
- Wiley-VCH, Berlin
- País de la publicación
- Germany
- Tipo de documento
- Article
- Idioma
- English
- Palabra clave (fr)
- Arsenic Couche mince Croissance cristalline Diffusion chimique Diffusion Dopage Epitaxie Etude expérimentale Non métal Profil dopage Silicium Support silicium
- Palabra clave (in)
- Arsenic Thin film Crystal growth Chemical diffusion Diffusion Doping Epitaxy Experimental study Non metal Doping profile Silicon
- Palabra clave (es)
- Capa delgada Difusion Doping Estudio experimental
- Clasificación
- Pascal
- 001 Exact sciences and technology / 001B Physics / 001B60 Condensed matter: structure, mechanical and thermal properties / 001B60H Surfaces and interfaces; thin films and whiskers (structure and nonelectronic properties) / 001B60H60 Physical properties of thin films, nonelectronic
- Disciplina
- Physics of condensed state : structure, mechanical and thermal properties
- Procedencia
- Inist-CNRS
- Base de datos
- PASCAL
- Identificador INIST
- 8499742
Sauf mention contraire ci-dessus, le contenu de cette notice bibliographique peut être utilisé dans le cadre d’une licence CC BY 4.0 Inist-CNRS / Unless otherwise stated above, the content of this bibliographic record may be used under a CC BY 4.0 licence by Inist-CNRS / A menos que se haya señalado antes, el contenido de este registro bibliográfico puede ser utilizado al amparo de una licencia CC BY 4.0 Inist-CNRS
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DOI
10.1002/crat.2170200507 
https://dx.doi.org/10.1002/crat.2170200507
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