The effect of deposition conditions on the refractive index of LTCVD SiO2 films
- Autor
- COBIANU, C; PAVELESCU, C; PAUNESCU, A
Microelectronica - Fuente
Journal of materials science letters. 1985, Vol 4, Num 11, pp 1419-1420 ; ref : 7 ref
- Editor
- Kluwer Academic Publishers, Dordrecht
- País de la publicación
- Netherlands
- Tipo de documento
- Article
- Idioma
- English
- Palabra clave (fr)
- Adsorption gaz solide Basse température Composé minéral Couche mince Croissance cristalline Dépôt chimique phase vapeur Ellipsométrie Etude expérimentale Indice réfraction Silicium Oxyde
- Palabra clave (in)
- Gas solid adsorption Low temperature Inorganic compound Thin film Crystal growth Chemical vapor deposition Ellipsometry Experimental study Refraction index Silicon Oxides
- Palabra clave (es)
- Compuesto mineral Capa delgada Elipsometria Estudio experimental Indice de refraccion
- Clasificación
- Pascal
- 001 Exact sciences and technology / 001B Physics / 001B60 Condensed matter: structure, mechanical and thermal properties / 001B60H Surfaces and interfaces; thin films and whiskers (structure and nonelectronic properties) / 001B60H60 Physical properties of thin films, nonelectronic
- Disciplina
- Physics of condensed state : structure, mechanical and thermal properties
- Procedencia
- Inist-CNRS
- Base de datos
- PASCAL
- Identificador INIST
- 8578884
Sauf mention contraire ci-dessus, le contenu de cette notice bibliographique peut être utilisé dans le cadre d’une licence CC BY 4.0 Inist-CNRS / Unless otherwise stated above, the content of this bibliographic record may be used under a CC BY 4.0 licence by Inist-CNRS / A menos que se haya señalado antes, el contenido de este registro bibliográfico puede ser utilizado al amparo de una licencia CC BY 4.0 Inist-CNRS
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DOI
10.1007/BF00720117 
https://dx.doi.org/10.1007/BF00720117
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