Positive charge generation in thin SiO2 films during nitridation process
- Autor
- PAIHUNG PAN; PAQUETTE, C
IBM, gen. technology div - Fuente
Applied physics letters. 1985, Vol 47, Num 5, pp 473-475 ; ref : 7 ref
- CODEN
- APPLAB
- ISSN
- 0003-6951
- Campo Científico
- Crystallography; Electronics; Optics; Condensed state physics
- Editor
- American Institute of Physics, Melville, NY
- País de la publicación
- United States
- Tipo de documento
- Article
- Idioma
- English
- Palabra clave (fr)
- Composé minéral Couche mince Epaisseur Etude expérimentale Nitruration
- Palabra clave (in)
- Inorganic compound Thin film Thickness Experimental study Nitriding
- Palabra clave (es)
- Compuesto mineral Capa delgada Espesor Estudio experimental
- Clasificación
- Pascal
- 001 Exact sciences and technology / 001B Physics / 001B60 Condensed matter: structure, mechanical and thermal properties / 001B60H Surfaces and interfaces; thin films and whiskers (structure and nonelectronic properties) / 001B60H90 Other topics in structure, and nonelectronic properties of surfaces and interfaces; thin films and whiskers
- Disciplina
- Physics of condensed state : structure, mechanical and thermal properties
- Procedencia
- Inist-CNRS
- Base de datos
- PASCAL
- Identificador INIST
- 8634904
Sauf mention contraire ci-dessus, le contenu de cette notice bibliographique peut être utilisé dans le cadre d’une licence CC BY 4.0 Inist-CNRS / Unless otherwise stated above, the content of this bibliographic record may be used under a CC BY 4.0 licence by Inist-CNRS / A menos que se haya señalado antes, el contenido de este registro bibliográfico puede ser utilizado al amparo de una licencia CC BY 4.0 Inist-CNRS
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DOI
10.1063/1.96096 
https://dx.doi.org/10.1063/1.96096
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